Pencirian SiO2 untuk fabrikasi transistor MOS /
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| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | Malay |
| Published: |
Bangi :
Fakulti Kejuruteraan, Universiti Kebangsaan,
1997
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| Subjects: | |
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| LEADER | 01003nam a2200265 a 4500 | ||
|---|---|---|---|
| 003 | UKM | ||
| 005 | 19991115154600.0 | ||
| 008 | 991115s1997 my a m 000 0 may | ||
| 039 | 9 | |a 199911151546 |b tmleng |y 11-15-1999 |z tmleng | |
| 090 | |a QD181.S6S24 1997 tesis | ||
| 090 | |a QD181 | ||
| 100 | 0 | |a Sakina Farikhullah Khan | |
| 245 | 1 | |a Pencirian SiO2 untuk fabrikasi transistor MOS / |c Sakina Farikhullah Khan | |
| 260 | |a Bangi : |b Fakulti Kejuruteraan, Universiti Kebangsaan, |c 1997 | ||
| 300 | |a 146 p. : |b ill. ; |c 30 cm. | ||
| 502 | |a Tesis (Sarjana Sains) - Universiti Kebangsaan Malaysia, 1997 | ||
| 504 | |a References: p. 113-117 | ||
| 650 | 0 | |a Silicon oxide | |
| 650 | 0 | |a Oxidation | |
| 907 | |a .b12556427 |b 28-05-21 |c 12-11-19 | ||
| 998 | |a t |b 11-02-99 |c m |d x |e - |f may |g my |h 0 | ||
| 914 | |a vtls000263736 | ||
| 990 | |a ltm | ||
| 991 | |a Fakulti Kejuruteraan | ||
| 945 | |a QD181.S6S24 1997 tesis [00008052935] |g 1 |i 00001208402 |j 0 |l t0040 |n No. of pieces: 1 |o - |p MYR0.00 |q - |r - |s - |t 3 |u 0 |v 0 |w 0 |x 0 |y .i15944190 |z 12-11-19 | ||