Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
Saved in:
Main Author: | Muhammad Faiz Bukhori |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
Glascow :
University of Glascow,
2011
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Extraction of submicron mosfet parameters /
by: Seah, Kah Suan
Published: (1997) -
The lateral profiling of interface state and oxide charge densities in electrically stressed MOSFET's /
by: Hoon, Siew Kuok
Published: (1998) -
Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
by: Tan, Suat Eng
Published: (1997) -
Hot-carrier degradation study in MOSFET's by charge pumping, gated-diode and floating gate techniques /
by: Goh, Yong Han
Published: (1997) -
Hot-carrier effects in thin gate oxide MOSFET's /
by: See, Leng Kian
Published: (1998)