Electrical characterization of 4H silicon carbide Schottky diodes under electron radiation /
Electronic components utilized in space missions are required to be radiation hard to maintain optimized electrical performance. Because of its wide bandgap, 4H-SiC based devices have been demonstrated to be the most suitable candidate for this purpose. This research investigates the effects of elec...
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| 主要作者: | |
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
Kuala Lumpur :
Kulliyyah of Engineering, International Islamic University Malaysia,
2015
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| 主题: | |
| 在线阅读: | http://studentrepo.iium.edu.my/handle/123456789/4742 |
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