Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation /
In space there are many high energetic particles and rays which potentially hazardous to microelectronic circuits and systems. The study of electrical characterization with radiation effect is important for any space exploration as high energetic particles and rays of space seriously limiting the re...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
Gombak, Selangor :
Kulliyyah of Engineering, International Islamic University Malaysia,
2016
|
| Subjects: | |
| Online Access: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!