Rosminazuin binti Ab. Rahim. Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor.
Chicago Style (17th ed.) CitationRosminazuin binti Ab. Rahim. Significance of Post Oxidation Annealing (POA) and Post Metallization Annealing (PMA) on the Capacitance-voltage Characterization of Si3N4 Mos Capacitor.
MLA引文Rosminazuin binti Ab. Rahim. Significance of Post Oxidation Annealing (POA) and Post Metallization Annealing (PMA) on the Capacitance-voltage Characterization of Si3N4 Mos Capacitor.
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