Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
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| Item Description: | "Thesis submitted in partial fulfilment for the degree of Master of Science Microelectronics."--On title page. |
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| Physical Description: | xiv, 53 leaves : illustrations ; 30 cm. |
| Bibliography: | Includes bibliographical references (leaves 53). |