Electrical characterization of discrete SiC Schottky power diodes and converter circuits under electron radiation /
Diodes utilized in harsh radiation environment especially in outer space need to be radiation-hard to maintain the optimized electrical performance. Currently, the most used space diodes are based on Silicon. With Silicon pushed to its limit, diodes made from Silicon Carbide which are faster and tou...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
Kuala Lumpur :
Kulliyyah of Engineering,International Islamic University Malaysia,
2019
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| Subjects: | |
| Online Access: | http://studentrepo.iium.edu.my/handle/123456789/4743 |
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| LEADER | 042290000a22002890004500 | ||
|---|---|---|---|
| 008 | 190311s2019 my a f m 000 0 eng d | ||
| 040 | |a UIAM |b eng |e rda | ||
| 041 | |a eng | ||
| 043 | |a a-my--- | ||
| 100 | 0 | |a Mohamad Azim bin Mohd Khairi, |e author | |
| 245 | 1 | 0 | |a Electrical characterization of discrete SiC Schottky power diodes and converter circuits under electron radiation / |c by Mohamad Azim bin Mohd Khairi |
| 264 | 1 | |a Kuala Lumpur : |b Kulliyyah of Engineering,International Islamic University Malaysia, |c 2019 | |
| 300 | |a xviii, 112 leaves : |b colour illustrations ; |c 30cm. | ||
| 336 | |2 rdacontent |a text | ||
| 347 | |2 rdaft |a text file |b PDF | ||
| 502 | |a Thesis (MSEE)--International Islamic University Malaysia, 2018. | ||
| 504 | |a Includes bibliographical references (leaves 105-111). | ||
| 520 | |a Diodes utilized in harsh radiation environment especially in outer space need to be radiation-hard to maintain the optimized electrical performance. Currently, the most used space diodes are based on Silicon. With Silicon pushed to its limit, diodes made from Silicon Carbide which are faster and tougher have capture the attention of researchers and manufacturers. Therefore, a performance comparison of high-voltage commercial Silicon Carbide Schottky power diodes from ROHM Semiconductor Co., and CREE, Inc., is made in this study. Commercial diodes are important due to its low cost and ease of availability, however much of their characteristics under radiation environment is still unknown. The diodes were irradiated with high-energy, 3.0 MeV, electrons within a dose range from 2 to 15 MGy. Current density-voltage and capacitance-voltage characterization techniques have been used to investigate the impact of the irradiation on the ideality factor, saturation current, series resistance and Schottky barrier height. The results of both models show that, the forward bias current density decreases with increasing irradiation dose, while the reverse bias current increases except for diodes irradiated with 15 MGy. However, the ideality factor of the forward current corresponding to all irradiation doses did not significantly change until the irradiation dose of 15 MGy. The ideality factor at before irradiation are 1.026 and 1.01, increased to 1.2 and 1.8 at 15 MGy for both ROHM and CREE diodes respectively. It has also been observed that, for both models, the saturation current increases until at 5 MGy then decreases at 10 MGy which lead to the opposing behaviour observed in Schottky barrier height for every dose respectively. Subsequently, the series resistance showed significant rise for both models and are interpreted as being due to the changes in the free carriers concentration during irradiation. The capacitance for both models is reduced after irradiation, therefore, suggesting that the effective free carriers concentration is also decreased with increasing irradiation dose probably due to trapping effect by the defects induced from the irradiation. Furthermore, the diodes were tested in power converters (boost and buck converter) with an improved configuration to determine the overall circuit response. The performance of the converters is indeed reduced over increasing radiation dose due to the increase in the series resistance of the diodes. In addition, increase in the forward bias turn-on voltage of the irradiated diodes caused the output voltage in 100 kHz to be lower than in 10 kHz switching frequency. Some energy losses in term of heat dissipation have also been observed in boost converter at 75% duty cycle and at100 kHz. | ||
| 596 | |a 1 | ||
| 655 | 7 | |a Theses, IIUM local | |
| 690 | |a Dissertations, Academic |x Department of Electrical and Computer Engineering |z IIUM | ||
| 710 | 2 | |a International Islamic University Malaysia. |b Department of Electrical and Computer Engineering | |
| 856 | 4 | |u http://studentrepo.iium.edu.my/handle/123456789/4743 | |
| 900 | |a sbh to aaz | ||
| 999 | |c 440030 |d 472526 | ||
| 952 | |0 0 |6 XX(554468.1) |7 0 |8 THESES |9 764085 |a IIUM |b IIUM |c MULTIMEDIA |g 0.00 |o XX(554468.1) |p 11100405351 |r 1900-01-02 |t 1 |v 0.00 |y THESIS | ||
| 952 | |0 0 |6 XX(554468.1) CD |7 5 |8 THESES |9 858056 |a IIUM |b IIUM |c MULTIMEDIA |g 0.00 |o XX(554468.1) CD |p 11100405352 |r 1900-01-02 |t 1 |v 0.00 |y THESISDIG | ||