Nur Syafiqah binti Yusop. (2017). Effect of single event upset on 6T and 12T static random access memory for different CMOS technologies. Kulliyyah of Engineering, International Islamic University Malaysia.
Chicago Style (17th ed.) CitationNur Syafiqah binti Yusop. Effect of Single Event Upset on 6T and 12T Static Random Access Memory for Different CMOS Technologies. Kuala Lumpur: Kulliyyah of Engineering, International Islamic University Malaysia, 2017.
MLA引文Nur Syafiqah binti Yusop. Effect of Single Event Upset on 6T and 12T Static Random Access Memory for Different CMOS Technologies. Kulliyyah of Engineering, International Islamic University Malaysia, 2017.
警告:这些引文格式不一定是100%准确.