Dopants concentration effect on gallium arsenide and gallium nitride-based homojunction LED epi-layers
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| LEADER | 00699nam a2200145 4500 | ||
|---|---|---|---|
| 100 | |a Faris Azim Ahmad Fajri |9 576224 | ||
| 245 | |a Dopants concentration effect on gallium arsenide and gallium nitride-based homojunction LED epi-layers | ||
| 264 | |a Kuantan : |b Kulliyyah of Science, International Islamic University Malaysia, |c 2021 | ||
| 336 | |2 rdacontent | ||
| 337 | |2 rdamedia | ||
| 338 | |2 rdacarrier | ||
| 942 | |2 lcc |n 0 | ||
| 999 | |c 516927 |d 548344 | ||
| 952 | |0 0 |1 0 |2 lcc |4 0 |7 5 |8 IIUMTHESIS |9 1017015 |a KIMC |b KIMC |c THESIS |d 2023-07-05 |p 11100484502 |r 2023-07-05 |w 2023-07-05 |y THESIS | ||
| 952 | |0 0 |1 0 |2 lcc |4 0 |7 5 |8 THESISSOFTCOPY |9 1017016 |a KIMC |b KIMC |c MULTIMEDIA |d 2023-07-05 |p 11100484503 |r 2023-07-05 |w 2023-07-05 |y THESISDIG | ||