Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices
High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide.
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my-mmu-ep.11242010-08-23T03:47:22Z Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices 2006-05 Wong, Man On TK7800-8360 Electronics High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide. 2006-05 Thesis http://shdl.mmu.edu.my/1124/ http://myto.perpun.net.my/metoalogin/logina.php masters Multimedia University Research Library |
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TK7800-8360 Electronics |
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TK7800-8360 Electronics Wong, Man On Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
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High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide. |
format |
Thesis |
qualification_level |
Master's degree |
author |
Wong, Man On |
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Wong, Man On |
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Wong, Man On |
title |
Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
title_short |
Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
title_full |
Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
title_fullStr |
Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
title_full_unstemmed |
Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices |
title_sort |
study of msq as low-k dielectric material for semiconductor devices |
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Multimedia University |
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Research Library |
publishDate |
2006 |
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1747829296583409664 |