Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application

In this research work, a new capacitor stack platinum/barium strontium titanate/nickel-iron/copper (Pt/BST/Ni-Fe/Cu) has been designed and fabricated with platinum as top electrode, barium strontium titanate (Ba0.5Sr0.5TiO) as dielectric material and nickel-iron thin film deposited copper substrate...

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Main Author: Ruthramurthy, Balachandran
Format: Thesis
Published: 2012
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id my-mmu-ep.5789
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spelling my-mmu-ep.57892014-10-23T04:18:39Z Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application 2012-02 Ruthramurthy, Balachandran TK Electrical engineering. Electronics Nuclear engineering In this research work, a new capacitor stack platinum/barium strontium titanate/nickel-iron/copper (Pt/BST/Ni-Fe/Cu) has been designed and fabricated with platinum as top electrode, barium strontium titanate (Ba0.5Sr0.5TiO) as dielectric material and nickel-iron thin film deposited copper substrate (Ni-Fe/Cu) as bottom electrode. This capacitor is used for storage application like a dynamic random access memory cell. The as-fabricated capacitor offered dielectric constant of 690, dielectric loss of 0.05 at frequency of 1 kHz and leakage current density of 33 nA/cm2 for ± 5 V. 2012-02 Thesis http://shdl.mmu.edu.my/5789/ http://library.mmu.edu.my/diglib/onlinedb/dig_lib.php phd doctoral Multimedia University Faculty of Engineering
institution Multimedia University
collection MMU Institutional Repository
topic TK Electrical engineering
Electronics Nuclear engineering
spellingShingle TK Electrical engineering
Electronics Nuclear engineering
Ruthramurthy, Balachandran
Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
description In this research work, a new capacitor stack platinum/barium strontium titanate/nickel-iron/copper (Pt/BST/Ni-Fe/Cu) has been designed and fabricated with platinum as top electrode, barium strontium titanate (Ba0.5Sr0.5TiO) as dielectric material and nickel-iron thin film deposited copper substrate (Ni-Fe/Cu) as bottom electrode. This capacitor is used for storage application like a dynamic random access memory cell. The as-fabricated capacitor offered dielectric constant of 690, dielectric loss of 0.05 at frequency of 1 kHz and leakage current density of 33 nA/cm2 for ± 5 V.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Ruthramurthy, Balachandran
author_facet Ruthramurthy, Balachandran
author_sort Ruthramurthy, Balachandran
title Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
title_short Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
title_full Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
title_fullStr Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
title_full_unstemmed Fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
title_sort fabrication and characterization of platinum/barium strontium titanate/nickel-iron/copper capacitor for storage application
granting_institution Multimedia University
granting_department Faculty of Engineering
publishDate 2012
_version_ 1747829592368873472