Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad

The work presented here shows the effect of annealing temperature on Cul thin films. The Cul materials in thin film structure have been synthesized using the sol-gel method. The method used for thin film deposition was spin coating technique on glass and silicon substrates. Glass substrate is used f...

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Main Author:	Muhammad, Nur Amalina
Format:	Thesis
Language:	English
Published:	2010
Online Access:	https://ir.uitm.edu.my/id/eprint/102658/1/102658.pdf
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id	my-uitm-ir.102658
record_format	uketd_dc
spelling	my-uitm-ir.1026582024-09-30T08:55:11Z Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad 2010 Muhammad, Nur Amalina The work presented here shows the effect of annealing temperature on Cul thin films. The Cul materials in thin film structure have been synthesized using the sol-gel method. The method used for thin film deposition was spin coating technique on glass and silicon substrates. Glass substrate is used for the purpose of characterization for electrical and optical properties. While for silicon substrates is used for structural properties characterization. The electrical, optical properties and surface morphology was characterized by Field Emission Scanning Electron Microscopy (FESEM), atomic force microscopy (AFM), UV-Vis-NIR measurement and two point probe I-V measurement. For the structural properties, FESEM images reveal noticeable transformation in film morphology among the films fabricated at various annealing temperatures. The nanostructed Cul thin films can be seen through AFM measurement. Next for optical properties, the study is concentrated on its transmittance, absorption cofficient and optical band gap. The Cul thin films exhibited an optical transmittance of 47%-80% at various annealing temperature in the wavelength of 400-800nm. The purpose for I-V measurement is to study its resistivity and conductivity. The I-V measurement in dark indicates that the resistivity decreases until the sintering temperature is -100°C. However, the resistivity of Cul under illumination is increasing since Cul tends to be oxidized under continuous illumination. 2010 Thesis https://ir.uitm.edu.my/id/eprint/102658/ https://ir.uitm.edu.my/id/eprint/102658/1/102658.pdf text en public degree Universiti Teknologi MARA Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
description	The work presented here shows the effect of annealing temperature on Cul thin films. The Cul materials in thin film structure have been synthesized using the sol-gel method. The method used for thin film deposition was spin coating technique on glass and silicon substrates. Glass substrate is used for the purpose of characterization for electrical and optical properties. While for silicon substrates is used for structural properties characterization. The electrical, optical properties and surface morphology was characterized by Field Emission Scanning Electron Microscopy (FESEM), atomic force microscopy (AFM), UV-Vis-NIR measurement and two point probe I-V measurement. For the structural properties, FESEM images reveal noticeable transformation in film morphology among the films fabricated at various annealing temperatures. The nanostructed Cul thin films can be seen through AFM measurement. Next for optical properties, the study is concentrated on its transmittance, absorption cofficient and optical band gap. The Cul thin films exhibited an optical transmittance of 47%-80% at various annealing temperature in the wavelength of 400-800nm. The purpose for I-V measurement is to study its resistivity and conductivity. The I-V measurement in dark indicates that the resistivity decreases until the sintering temperature is -100°C. However, the resistivity of Cul under illumination is increasing since Cul tends to be oxidized under continuous illumination.
format	Thesis
qualification_level	Bachelor degree
author	Muhammad, Nur Amalina
spellingShingle	Muhammad, Nur Amalina Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
author_facet	Muhammad, Nur Amalina
author_sort	Muhammad, Nur Amalina
title	Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
title_short	Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
title_full	Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
title_fullStr	Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
title_full_unstemmed	Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad
title_sort	photoconductivity of p-type semiconducting nanostructured copper (i) iodide (cul) thin films / nur amalina muhammad
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Electrical Engineering
publishDate	2010
url	https://ir.uitm.edu.my/id/eprint/102658/1/102658.pdf
_version_	1811769230647885824

Photoconductivity of P-type semiconducting nanostructured Copper (I) Iodide (Cul) thin films / Nur Amalina Muhammad

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