Simulation of Planar and Finfet Transistor Model for Digital Gate Applications / Siti Aishah Abu Salim
In this work, FinFET (dual-gate) transistor is simulated using computer added design (CAD) tools to replace the conventional planar MOSFET. Nowadays planar transistors are no longer clean due to current leakage during on-off switches. Thus, these effects have caused some heat and power issues. FinFE...
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| Format: | Thesis |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/102692/1/102692.pdf |
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