Simulation of Planar and Finfet Transistor Model for Digital Gate Applications / Siti Aishah Abu Salim

In this work, FinFET (dual-gate) transistor is simulated using computer added design (CAD) tools to replace the conventional planar MOSFET. Nowadays planar transistors are no longer clean due to current leakage during on-off switches. Thus, these effects have caused some heat and power issues. FinFE...

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Bibliographic Details
Main Author: Abu Salim, Siti Aishah
Format: Thesis
Language:English
Published: 2013
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/102692/1/102692.pdf
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