Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim

This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The...

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Main Author: Abd Halim, Mohd Hafiz Rifqi
Format: Thesis
Language:English
Published: 2009
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Online Access:https://ir.uitm.edu.my/id/eprint/102893/1/102893.pdf
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spelling my-uitm-ir.1028932024-11-15T07:43:29Z Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim 2009 Abd Halim, Mohd Hafiz Rifqi Radiation physics (General) Telecommunication This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The ZnO thin films were deposited by thermal chemical vapor deposition (TCVD) technique using Zinc acetate dihydrate as a precursor. Deposited films are annealed at various temperatures from 650°C to 850°C. The optical properties are characterized using photoluminescence (PL) with 325nm UV light from a He-Cd laser at room temperature and the electrical properties are characterized using Solar simulator measurement unit. Field emission scanning electron microscopy (FESEM) used to determine the surface morphology of the samples. 2009 Thesis https://ir.uitm.edu.my/id/eprint/102893/ https://ir.uitm.edu.my/id/eprint/102893/1/102893.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering
institution Universiti Teknologi MARA
collection UiTM Institutional Repository
language English
topic Radiation physics (General)
Telecommunication
spellingShingle Radiation physics (General)
Telecommunication
Abd Halim, Mohd Hafiz Rifqi
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
description This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The ZnO thin films were deposited by thermal chemical vapor deposition (TCVD) technique using Zinc acetate dihydrate as a precursor. Deposited films are annealed at various temperatures from 650°C to 850°C. The optical properties are characterized using photoluminescence (PL) with 325nm UV light from a He-Cd laser at room temperature and the electrical properties are characterized using Solar simulator measurement unit. Field emission scanning electron microscopy (FESEM) used to determine the surface morphology of the samples.
format Thesis
qualification_level Bachelor degree
author Abd Halim, Mohd Hafiz Rifqi
author_facet Abd Halim, Mohd Hafiz Rifqi
author_sort Abd Halim, Mohd Hafiz Rifqi
title Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
title_short Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
title_full Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
title_fullStr Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
title_full_unstemmed Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
title_sort post annealing temperature effect on photoluminescence spectroscopic of nanostructured zno thin film by tcvd method / mohd hafiz rifqi abd halim
granting_institution Universiti Teknologi MARA (UiTM)
granting_department Faculty of Electrical Engineering
publishDate 2009
url https://ir.uitm.edu.my/id/eprint/102893/1/102893.pdf
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