Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim
This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The...
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my-uitm-ir.1028932024-11-15T07:43:29Z Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim 2009 Abd Halim, Mohd Hafiz Rifqi Radiation physics (General) Telecommunication This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The ZnO thin films were deposited by thermal chemical vapor deposition (TCVD) technique using Zinc acetate dihydrate as a precursor. Deposited films are annealed at various temperatures from 650°C to 850°C. The optical properties are characterized using photoluminescence (PL) with 325nm UV light from a He-Cd laser at room temperature and the electrical properties are characterized using Solar simulator measurement unit. Field emission scanning electron microscopy (FESEM) used to determine the surface morphology of the samples. 2009 Thesis https://ir.uitm.edu.my/id/eprint/102893/ https://ir.uitm.edu.my/id/eprint/102893/1/102893.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering |
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Radiation physics (General) Telecommunication |
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Radiation physics (General) Telecommunication Abd Halim, Mohd Hafiz Rifqi Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
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This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The ZnO thin films were deposited by thermal chemical vapor deposition (TCVD) technique using Zinc acetate dihydrate as a precursor. Deposited films are annealed at various temperatures from 650°C to 850°C. The optical properties are characterized using photoluminescence (PL) with 325nm UV light from a He-Cd laser at room temperature and the electrical properties are characterized using Solar simulator measurement unit. Field emission scanning electron microscopy (FESEM) used to determine the surface morphology of the samples. |
format |
Thesis |
qualification_level |
Bachelor degree |
author |
Abd Halim, Mohd Hafiz Rifqi |
author_facet |
Abd Halim, Mohd Hafiz Rifqi |
author_sort |
Abd Halim, Mohd Hafiz Rifqi |
title |
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
title_short |
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
title_full |
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
title_fullStr |
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
title_full_unstemmed |
Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim |
title_sort |
post annealing temperature effect on photoluminescence spectroscopic of nanostructured zno thin film by tcvd method / mohd hafiz rifqi abd halim |
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Universiti Teknologi MARA (UiTM) |
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Faculty of Electrical Engineering |
publishDate |
2009 |
url |
https://ir.uitm.edu.my/id/eprint/102893/1/102893.pdf |
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1818588060998172672 |