Investigation of silicon nitride capping layer and embedded silicon germanium effect on 90nm CMOS devices / Norlina Mohd Zain
This thesis highlights the effect of Si3N4 capping layer, embedded SiGe in the source/drain and SiGe layer on the bottom of the strained silicon for strained-silicon technology effect on 90 nm complementary metal oxide semiconductor (CMOS) performance focusing on threshold voltage and drain current...
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| Format: | Thesis |
| Language: | English |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/102939/1/102939.pdf |
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