GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano

Phase change memory (PCM) is one of the promising technology for future in nonvolatile solid state memory. The concept of phase change memory is the changing state from amorphous to crystalline state. The temperature of changing the amorphous to crystalline is differed according to the phase change...

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Main Author:	Rozano, Muhammad Syamimi
Format:	Thesis
Language:	English
Published:	2015
Subjects:	Devices for production of electricity by direct energy conversion
Online Access:	https://ir.uitm.edu.my/id/eprint/102962/1/102962.pdf
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id	my-uitm-ir.102962
record_format	uketd_dc
spelling	my-uitm-ir.1029622024-10-01T07:58:29Z GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano 2015 Rozano, Muhammad Syamimi Devices for production of electricity by direct energy conversion Electric heating. Resistance heating Phase change memory (PCM) is one of the promising technology for future in nonvolatile solid state memory. The concept of phase change memory is the changing state from amorphous to crystalline state. The temperature of changing the amorphous to crystalline is differed according to the phase change material. Ge2Se2T5 is the common phase change material for phase change memory. However the crystalline state for Ge2Se2T5 is (450K-900K). After 900K, the phase change material will melt and become amorphous state. There are few reasons of conducting this project. Firstly, this project is conducting in order to overcome the rapid changes in conventional phase change memory layer which is hardly to control the crystallization process. Then, the implementation of Germanium Telluride and Silicon Carbide (SiC) will be used for the design in order to achieve the multi-level memory. In this project, the phase change memory is designed by using Germanium Telluride as the phase change layer. The top and bottom electrodes for this structure are Titanium Nitride. Then, the heater for this structure is Silicon Carbide and silicon dioxide as the insulator for the structure. The substrate for this structure is Glass (quartz). Figure 1 shows the structure for the design multilevel phase change memory. COMSOL 4.4 will be used for the simulation software. A 100ns SET pulse with time dependent from 0.1 to 3V in order to achieve four bits of multilevel memory. 2015 Thesis https://ir.uitm.edu.my/id/eprint/102962/ https://ir.uitm.edu.my/id/eprint/102962/1/102962.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	Devices for production of electricity by direct energy conversion Devices for production of electricity by direct energy conversion
spellingShingle	Devices for production of electricity by direct energy conversion Devices for production of electricity by direct energy conversion Rozano, Muhammad Syamimi GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
description	Phase change memory (PCM) is one of the promising technology for future in nonvolatile solid state memory. The concept of phase change memory is the changing state from amorphous to crystalline state. The temperature of changing the amorphous to crystalline is differed according to the phase change material. Ge2Se2T5 is the common phase change material for phase change memory. However the crystalline state for Ge2Se2T5 is (450K-900K). After 900K, the phase change material will melt and become amorphous state. There are few reasons of conducting this project. Firstly, this project is conducting in order to overcome the rapid changes in conventional phase change memory layer which is hardly to control the crystallization process. Then, the implementation of Germanium Telluride and Silicon Carbide (SiC) will be used for the design in order to achieve the multi-level memory. In this project, the phase change memory is designed by using Germanium Telluride as the phase change layer. The top and bottom electrodes for this structure are Titanium Nitride. Then, the heater for this structure is Silicon Carbide and silicon dioxide as the insulator for the structure. The substrate for this structure is Glass (quartz). Figure 1 shows the structure for the design multilevel phase change memory. COMSOL 4.4 will be used for the simulation software. A 100ns SET pulse with time dependent from 0.1 to 3V in order to achieve four bits of multilevel memory.
format	Thesis
qualification_level	Bachelor degree
author	Rozano, Muhammad Syamimi
author_facet	Rozano, Muhammad Syamimi
author_sort	Rozano, Muhammad Syamimi
title	GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
title_short	GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
title_full	GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
title_fullStr	GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
title_full_unstemmed	GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano
title_sort	gete multi-level phase change memory with separate heater layer/ muhammad syamimi rozano
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2015
url	https://ir.uitm.edu.my/id/eprint/102962/1/102962.pdf
_version_	1811769239857528832

GeTe multi-level phase change memory with separate heater layer/ Muhammad Syamimi Rozano

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