Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman

Nowadays, downsizing the size of metal-oxide semiconductor field effect transistor (mosfet) is the recent trends in MOSFET technologies such as the aggressive scaling of gate length, the decrease in on-current with scaling, and the increased demand for a variety of transistor types for use in a wide...

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Main Author:	Othman, Nur Hidayah
Format:	Thesis
Language:	English
Published:	2007
Subjects:	Semiconductors
Online Access:	https://ir.uitm.edu.my/id/eprint/103063/1/103063.pdf
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id	my-uitm-ir.103063
record_format	uketd_dc
spelling	my-uitm-ir.1030632024-11-19T03:55:23Z Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman 2007 Othman, Nur Hidayah Semiconductors Computer engineering. Computer hardware Nowadays, downsizing the size of metal-oxide semiconductor field effect transistor (mosfet) is the recent trends in MOSFET technologies such as the aggressive scaling of gate length, the decrease in on-current with scaling, and the increased demand for a variety of transistor types for use in a wide range of target products. This research is focused on the development of 0.13um channel length of pchannel (pmos) enhancement mode MOSFET. Simulation of the process is carried out using silvaco athena to modify theoretical values and obtain accurate process parameters. The most common effect that occurs in the short channel MOSFETS are channel modulation, drain induced barrier lowering (dibl), punch-through and hot electron effect. Several advanced method such as lightly-doped drain (ldd), halo implant and retrograde well is applied to reduce the short channel effects. At the device simulation process, the electrical parameter is extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage or short channel effect of a mosfet device. 2007 Thesis https://ir.uitm.edu.my/id/eprint/103063/ https://ir.uitm.edu.my/id/eprint/103063/1/103063.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Hussin, Hanim
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Hussin, Hanim
topic	Semiconductors Semiconductors
spellingShingle	Semiconductors Semiconductors Othman, Nur Hidayah Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
description	Nowadays, downsizing the size of metal-oxide semiconductor field effect transistor (mosfet) is the recent trends in MOSFET technologies such as the aggressive scaling of gate length, the decrease in on-current with scaling, and the increased demand for a variety of transistor types for use in a wide range of target products. This research is focused on the development of 0.13um channel length of pchannel (pmos) enhancement mode MOSFET. Simulation of the process is carried out using silvaco athena to modify theoretical values and obtain accurate process parameters. The most common effect that occurs in the short channel MOSFETS are channel modulation, drain induced barrier lowering (dibl), punch-through and hot electron effect. Several advanced method such as lightly-doped drain (ldd), halo implant and retrograde well is applied to reduce the short channel effects. At the device simulation process, the electrical parameter is extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage or short channel effect of a mosfet device.
format	Thesis
qualification_level	Bachelor degree
author	Othman, Nur Hidayah
author_facet	Othman, Nur Hidayah
author_sort	Othman, Nur Hidayah
title	Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
title_short	Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
title_full	Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
title_fullStr	Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
title_full_unstemmed	Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman
title_sort	fabrication and characterization of 130nm pmos device using silvaco simulator / nur hidayah othman
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	https://ir.uitm.edu.my/id/eprint/103063/1/103063.pdf
_version_	1818588076092424192

Fabrication and characterization of 130nm PMOS device using Silvaco simulator / Nur Hidayah Othman

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