Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim

A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to fo...

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Main Author:	Hashim, Shaiful Bakhtiar
Format:	Thesis
Language:	English
Published:	2014
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	https://ir.uitm.edu.my/id/eprint/11932/1/TM_SHAIFUL%20BAKHTIAR%20HASHIM%20EE%2014_5%201.pdf
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id	my-uitm-ir.11932
record_format	uketd_dc
spelling	my-uitm-ir.119322016-05-14T07:20:40Z Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim 2014 Hashim, Shaiful Bakhtiar TK Electrical engineering. Electronics. Nuclear engineering A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power of 100 W to 300 W, deposition temperature of room temperature to 200 °C, sputtering pressure of 5 mTorr to 8 mTorr, argon gas flow rate of 40 sccm to 100 sccm and also the influence of Substrate bias power of +10 W to +150 W. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F, atomic force microscope (AFM) XE-100 Park System AFM and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that even giving higher RF power, the thin films Start to crystallize but poly-Si thin films still not achieved. To overcome this problem, we explored the role of Substrate bias to fiirther enhance the crystallization of the thin films. The Substrate bias may provide higher energy during the bombardment and at the same time modifies the arrangement of particles to produce high crystalline quality. The results of the thickness and deposition rate measurements show that Substrate bias has influence on the growth of films on the Substrate. As the Substrate bias increase the deposition rate also increases due to the number of atom collision at the target which iead increasing the particles on the Substrate. From Raman spectroscopy result it showed that the Si-Si transverse optical (TO) peak was around 518 cm"1 for sample deposited at +30 W which indicates the existence of poly- Si phase. It shows that the thin film crystallized even at room temperature deposition with the influenced of the Substrate bias. 2014 Thesis https://ir.uitm.edu.my/id/eprint/11932/ https://ir.uitm.edu.my/id/eprint/11932/1/TM_SHAIFUL%20BAKHTIAR%20HASHIM%20EE%2014_5%201.pdf text en public mphil masters Universiti Teknologi MARA Perpustakaan Tun Abdul Razak
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Hashim, Shaiful Bakhtiar Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
description	A study on the growth of polycrystalline Silicon (poly-Si) on a glass Substrate at low temperature is being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power of 100 W to 300 W, deposition temperature of room temperature to 200 °C, sputtering pressure of 5 mTorr to 8 mTorr, argon gas flow rate of 40 sccm to 100 sccm and also the influence of Substrate bias power of +10 W to +150 W. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F, atomic force microscope (AFM) XE-100 Park System AFM and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that even giving higher RF power, the thin films Start to crystallize but poly-Si thin films still not achieved. To overcome this problem, we explored the role of Substrate bias to fiirther enhance the crystallization of the thin films. The Substrate bias may provide higher energy during the bombardment and at the same time modifies the arrangement of particles to produce high crystalline quality. The results of the thickness and deposition rate measurements show that Substrate bias has influence on the growth of films on the Substrate. As the Substrate bias increase the deposition rate also increases due to the number of atom collision at the target which iead increasing the particles on the Substrate. From Raman spectroscopy result it showed that the Si-Si transverse optical (TO) peak was around 518 cm"1 for sample deposited at +30 W which indicates the existence of poly- Si phase. It shows that the thin film crystallized even at room temperature deposition with the influenced of the Substrate bias.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Hashim, Shaiful Bakhtiar
author_facet	Hashim, Shaiful Bakhtiar
author_sort	Hashim, Shaiful Bakhtiar
title	Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_short	Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_full	Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_fullStr	Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_full_unstemmed	Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim
title_sort	low-temperature growth of polycrystalline si thin film using rf magnetron sputtering / shaiful bakhtiar hashim
granting_institution	Universiti Teknologi MARA
granting_department	Perpustakaan Tun Abdul Razak
publishDate	2014
url	https://ir.uitm.edu.my/id/eprint/11932/1/TM_SHAIFUL%20BAKHTIAR%20HASHIM%20EE%2014_5%201.pdf
_version_	1783733160402485248

Low-temperature growth of polycrystalline si thin film using RF magnetron sputtering / Shaiful Bakhtiar Hashim

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