Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman

This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en...

Full description

Saved in:

Bibliographic Details
Main Author:	Osman, Mohd Nizam
Format:	Thesis
Language:	English
Published:	2009
Subjects:	Elementary particle physics Applications of electronics
Online Access:	https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-uitm-ir.27375
record_format	uketd_dc
spelling	my-uitm-ir.273752022-06-14T03:46:17Z Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman 2009 Osman, Mohd Nizam Elementary particle physics Applications of electronics This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en durin g thi s study to obtain the des ired per form ance for eac h device layout. Th e first was to perform device simulation of different layout s in order to get a preliminary resul t. This simulation result was used as a refere nce durin g the seco nd stage which consis ted of actual dev ice measurement. The measurement was don e using on-wa fer measurem ent technique within the frequency range from 100 MHz to 40 GHz. The result s from these app roaches have show n that each device layout exhibited its own charac te ristics with spec ific adva ntages and disad vant ages toward s the DC and RF performances . The device with higher numb er of gate fingers has superior adva ntages in output current perform ance but exhibited lower cut-off frequency and higher noise compared to the other layout s used in thi s study. The analysis gave some indica tio ns on the wea knesses of a devic e with higher gate numb ers in high frequency circuit design applica tions. Neve rthe less, further research work may also be don e espec ially when invol ving various materi al struc tures, layout typ es and foundry processes in a HEMT device developm ent. 2009 Thesis https://ir.uitm.edu.my/id/eprint/27375/ https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf text en public masters Universiti Teknologi MARA Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	Elementary particle physics Applications of electronics
spellingShingle	Elementary particle physics Applications of electronics Osman, Mohd Nizam Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
description	This study carried out a detail analysis of the perform anc e of HEMT device with various numb ers of gate finger s with respect to their DC and RF performances. The dev ices were fabrica ted by a Plessey found ry which adapted a HEMT process with 0.2 um GaAs technology. A few stages were tak en durin g thi s study to obtain the des ired per form ance for eac h device layout. Th e first was to perform device simulation of different layout s in order to get a preliminary resul t. This simulation result was used as a refere nce durin g the seco nd stage which consis ted of actual dev ice measurement. The measurement was don e using on-wa fer measurem ent technique within the frequency range from 100 MHz to 40 GHz. The result s from these app roaches have show n that each device layout exhibited its own charac te ristics with spec ific adva ntages and disad vant ages toward s the DC and RF performances . The device with higher numb er of gate fingers has superior adva ntages in output current perform ance but exhibited lower cut-off frequency and higher noise compared to the other layout s used in thi s study. The analysis gave some indica tio ns on the wea knesses of a devic e with higher gate numb ers in high frequency circuit design applica tions. Neve rthe less, further research work may also be don e espec ially when invol ving various materi al struc tures, layout typ es and foundry processes in a HEMT device developm ent.
format	Thesis
qualification_level	Master's degree
author	Osman, Mohd Nizam
author_facet	Osman, Mohd Nizam
author_sort	Osman, Mohd Nizam
title	Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
title_short	Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
title_full	Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
title_fullStr	Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
title_full_unstemmed	Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman
title_sort	optimization of dc and rf performances using multiple-gated high electron mobility transistor (hemt) / mohd nizam osman
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Electrical Engineering
publishDate	2009
url	https://ir.uitm.edu.my/id/eprint/27375/1/TM_MOHD%20NIZAM%20OSMAN%20EE%2009_5.pdf
_version_	1783733959804321792

Optimization of dc and rf performances using multiple-gated high electron mobility transistor (HEMT) / Mohd Nizam Osman

Similar Items