Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal
This paper presents comparison between measurement of dielectric constant of silicon wafer by using MNDT which is at high frequency and by using HIOKI 3532-50 LCR HiTESTER which at low frequency. Measurement of dielectric properties of silicon wafer at microwave frequencies is performed in free spac...
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| التنسيق: | أطروحة |
| اللغة: | English |
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2010
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| الوصول للمادة أونلاين: | https://ir.uitm.edu.my/id/eprint/81107/1/81107.pdf |
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my-uitm-ir.811072024-07-28T08:26:13Z Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal 2010 Md Kamal, Nadia Microwaves. Including microwave circuits This paper presents comparison between measurement of dielectric constant of silicon wafer by using MNDT which is at high frequency and by using HIOKI 3532-50 LCR HiTESTER which at low frequency. Measurement of dielectric properties of silicon wafer at microwave frequencies is performed in free space using a pair of spotfocusing horn lens antennas, mode transitions, coaxial cable and vector network analyser (VNA). A contactless and non-destructive microwave method has been developed to characterize silicon semiconductor wafer from reflection and transmission measurement made in free space at normal incident. In this method, the free-space reflection and transmission coefficients, S11 and S21 are measured for silicon wafer sandwiched between two teflon plates which are quarter-wavelength at mid-band. The actual reflection and transmission coefficient, S11 and S21 of the silicon wafers are calculated from the measured S 11 and S21 of the teflon plate-silicon waferteflon plate assembly in which the complex permittivity and thickness of the teflon plates are known. Result for p-type and n-type doped silicon wafer are reported in frequency range of l 0GHz to 12GHz. As a comparison, a measurement at low frequency using DC method has been conducted. The frequency range is reported from 0.2 kHz to 50 kHz. 2010 Thesis https://ir.uitm.edu.my/id/eprint/81107/ https://ir.uitm.edu.my/id/eprint/81107/1/81107.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Naim, Nani Fadzlina |
| institution |
Universiti Teknologi MARA |
| collection |
UiTM Institutional Repository |
| language |
English |
| advisor |
Naim, Nani Fadzlina |
| topic |
Microwaves Including microwave circuits |
| spellingShingle |
Microwaves Including microwave circuits Md Kamal, Nadia Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| description |
This paper presents comparison between measurement of dielectric constant of silicon wafer by using MNDT which is at high frequency and by using HIOKI 3532-50 LCR HiTESTER which at low frequency. Measurement of dielectric properties of silicon wafer at microwave frequencies is performed in free space using a pair of spotfocusing horn lens antennas, mode transitions, coaxial cable and vector network analyser (VNA). A contactless and non-destructive microwave method has been developed to characterize silicon semiconductor wafer from reflection and transmission measurement made in free space at normal incident. In this method, the free-space reflection and transmission coefficients, S11 and S21 are measured for silicon wafer sandwiched between two teflon plates which are quarter-wavelength at mid-band. The actual reflection and transmission coefficient, S11 and S21 of the silicon wafers are calculated from the measured S 11 and S21 of the teflon plate-silicon waferteflon plate assembly in which the complex permittivity and thickness of the teflon plates are known. Result for p-type and n-type doped silicon wafer are reported in frequency range of l 0GHz to 12GHz. As a comparison, a measurement at low frequency using DC method has been conducted. The frequency range is reported from 0.2 kHz to 50 kHz. |
| format |
Thesis |
| qualification_level |
Bachelor degree |
| author |
Md Kamal, Nadia |
| author_facet |
Md Kamal, Nadia |
| author_sort |
Md Kamal, Nadia |
| title |
Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| title_short |
Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| title_full |
Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| title_fullStr |
Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| title_full_unstemmed |
Measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / Nadia Md Kamal |
| title_sort |
measurement of dielectric constant of silicon wafer using microwave non-destrictive testing and direct current technique / nadia md kamal |
| granting_institution |
Universiti Teknologi MARA (UiTM) |
| granting_department |
Faculty of Electrical Engineering |
| publishDate |
2010 |
| url |
https://ir.uitm.edu.my/id/eprint/81107/1/81107.pdf |
| _version_ |
1811768687548432384 |