Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin

The design of a rectangular microstrip patch antenna covered with semiconductor material operating at 2.4 GHz for wi-fi application is presented. This paper investigates the semiconductor effect to microstrip patch antenna based on the variety of thicknesses and type semiconductor. The semiconductor...

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Main Author: Kamarudin, Murni
Format: Thesis
Language:English
Published: 2015
Online Access:https://ir.uitm.edu.my/id/eprint/81679/1/81679.pdf
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spelling my-uitm-ir.816792023-11-09T03:24:53Z Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin 2015 Kamarudin, Murni The design of a rectangular microstrip patch antenna covered with semiconductor material operating at 2.4 GHz for wi-fi application is presented. This paper investigates the semiconductor effect to microstrip patch antenna based on the variety of thicknesses and type semiconductor. The semiconductor material used in this paper such as GaAs, AlGaAs, InGaAs with having difference permittivity.Permittivity for each semiconductor material is difference will indicates a material can become polarized by imposition of an electric field on an insulator (substrate antenna). The antenna are optimized using Computer Simulation Technology (CST) at 2.4 GHz frequency, the antenna will fabricated on FR4 with relative permittivity of 4.8, the substrate thickness is 1.6mm and the copper thickness is 0.035mm respectively. The results of return loss (Sn) are gathered and compared based on difference semiconductor material and thickness. 2015 Thesis https://ir.uitm.edu.my/id/eprint/81679/ https://ir.uitm.edu.my/id/eprint/81679/1/81679.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Subahir, Suhaila
institution Universiti Teknologi MARA
collection UiTM Institutional Repository
language English
advisor Subahir, Suhaila
description The design of a rectangular microstrip patch antenna covered with semiconductor material operating at 2.4 GHz for wi-fi application is presented. This paper investigates the semiconductor effect to microstrip patch antenna based on the variety of thicknesses and type semiconductor. The semiconductor material used in this paper such as GaAs, AlGaAs, InGaAs with having difference permittivity.Permittivity for each semiconductor material is difference will indicates a material can become polarized by imposition of an electric field on an insulator (substrate antenna). The antenna are optimized using Computer Simulation Technology (CST) at 2.4 GHz frequency, the antenna will fabricated on FR4 with relative permittivity of 4.8, the substrate thickness is 1.6mm and the copper thickness is 0.035mm respectively. The results of return loss (Sn) are gathered and compared based on difference semiconductor material and thickness.
format Thesis
qualification_level Bachelor degree
author Kamarudin, Murni
spellingShingle Kamarudin, Murni
Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
author_facet Kamarudin, Murni
author_sort Kamarudin, Murni
title Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
title_short Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
title_full Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
title_fullStr Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
title_full_unstemmed Investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 GHz / Murni Kamarudin
title_sort investigation on parasitic semiconductor on microstrip patch antenna operate at 2.4 ghz / murni kamarudin
granting_institution Universiti Teknologi MARA (UiTM)
granting_department Faculty of Electrical Engineering
publishDate 2015
url https://ir.uitm.edu.my/id/eprint/81679/1/81679.pdf
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