Effect of high-k FinFET performance / Fatin Syamila Mohammad
Scaling down transistor to 45nm node and below might require new processing steps such as new gate stack or new device structure such as FinFET. Thus, in this work the use of high-k gate insulator - hafnium oxide (Hf02) on FinFET performance was investigated. SPICE model was used to describe the rea...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2013
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| 主题: | |
| 在线阅读: | https://ir.uitm.edu.my/id/eprint/98671/1/98671.pdf |
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