Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions
Amongst various sensing and monitoring technologies, sensors based on field effect transistors (FETs) have attracted considerable attention from both the industry and academia. Owing to their unique characteristics such as their small size, lightweight, low cost, flexibility, fast response, stabilit...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://umpir.ump.edu.my/id/eprint/34351/1/Electrical%20and%20temperature%20characterisation.pdf |
| الوسوم: |
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