Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

Amongst various sensing and monitoring technologies, sensors based on field effect transistors (FETs) have attracted considerable attention from both the industry and academia. Owing to their unique characteristics such as their small size, lightweight, low cost, flexibility, fast response, stabilit...

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書目詳細資料
主要作者:	Hani Taha, Abd Assamad Al Ariqi
格式:	Thesis
語言:	English
出版:	2020
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://umpir.ump.edu.my/id/eprint/34351/1/Electrical%20and%20temperature%20characterisation.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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