Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions

Amongst various sensing and monitoring technologies, sensors based on field effect transistors (FETs) have attracted considerable attention from both the industry and academia. Owing to their unique characteristics such as their small size, lightweight, low cost, flexibility, fast response, stabilit...

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书目详细资料
主要作者:	Hani Taha, Abd Assamad Al Ariqi
格式:	Thesis
语言:	English
出版:	2020
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://umpir.ump.edu.my/id/eprint/34351/1/Electrical%20and%20temperature%20characterisation.pdf
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