The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-pola...

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Main Author:	Hazian, Mamat
Format:	Thesis
Language:	English
Subjects:	Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language)
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/2/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/3/Full%20text.pdf
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spelling	my-unimap-14502009-08-14T08:53:30Z The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor Hazian, Mamat Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-polarity Vg is applied to turn it off. In this research, thorough investigations on process parameters that affect the performance of depletion mode transistor have been studied. The study was emphasized on the ion implantation to forms the depletion channel. It is a very crucial process step in creating a successful depletion type MOSFET. To support the study, Design of Experiment (DOE) for ion implantation dose and energy has been implemented in MIMOS fabrication facility. The 0.5um CMOS process technology was used as a baseline to produce n-type depletion mode MOSFET. Besides running the experiment, simulation software (ATHENA and ATLAS) were used in this study to reduce the cost and time of producing experiment wafers. Comparison of experiment test results and simulation output was also discussed in details in this thesis. On the other hand, problems and observations from the experiment were highlighted and discussed too. One of the main issues is on the two-peak point of transconductance curve. According to the experimental results, it can found that phosphorus ion with dose 3.3e12 cm-2 and energy 60 keV used in depletion channel implant should produce good characteristics of depletion mode MOSFET with threshold voltage -0.7 V. Universiti Malaysia Perlis 2008 Thesis en http://dspace.unimap.edu.my/123456789/1450 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/2/Page%201-24.pdf 63f18b1d4f82b0c18cab4241eb76f406 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/3/Full%20text.pdf fae59f688f1b9264abae9201b01b8b43 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/4/license.txt 2fcfb79745579e98631d8ae4e73f8af2 Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language) School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
topic	Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language)
spellingShingle	Transistors Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Metal oxide semiconductors Field effect transistors (FETs) Silicon ATLAS (Computer program language) Hazian, Mamat The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
description	Metal-Oxide-Semiconductor field effect transistor (MOSFET) forms the basis in most of electronic applications. In certain part of electronic circuitry, there is a requirement to use depletion mode of MOSFET which delivers current at Vg=0V. This type of transistor is normally on unless reverse-polarity Vg is applied to turn it off. In this research, thorough investigations on process parameters that affect the performance of depletion mode transistor have been studied. The study was emphasized on the ion implantation to forms the depletion channel. It is a very crucial process step in creating a successful depletion type MOSFET. To support the study, Design of Experiment (DOE) for ion implantation dose and energy has been implemented in MIMOS fabrication facility. The 0.5um CMOS process technology was used as a baseline to produce n-type depletion mode MOSFET. Besides running the experiment, simulation software (ATHENA and ATLAS) were used in this study to reduce the cost and time of producing experiment wafers. Comparison of experiment test results and simulation output was also discussed in details in this thesis. On the other hand, problems and observations from the experiment were highlighted and discussed too. One of the main issues is on the two-peak point of transconductance curve. According to the experimental results, it can found that phosphorus ion with dose 3.3e12 cm-2 and energy 60 keV used in depletion channel implant should produce good characteristics of depletion mode MOSFET with threshold voltage -0.7 V.
format	Thesis
author	Hazian, Mamat
author_facet	Hazian, Mamat
author_sort	Hazian, Mamat
title	The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_short	The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_full	The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_fullStr	The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_full_unstemmed	The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor
title_sort	effect of phosphorous implant in converting the enhancement mode transistor into depletion mode transistor
granting_institution	Universiti Malaysia Perlis
granting_department	School of Microelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/2/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/1450/3/Full%20text.pdf
_version_	1747836767598280704

The effect of Phosphorous implant in converting the Enhancement Mode Transistor into Depletion Mode Transistor

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