Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization

This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. Prior to actual fabrication process, the SiNWs sensor is designed via Elphy Quantum GDS II Editor and AutoCAD. A to...

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Main Author:	Siti Fatimah, Abd Rahman
Format:	Thesis
Language:	English
Subjects:	Silicon Nanowires Nanotechnology Nanowires > Design and construction Silicon nanowires (SiNWs)
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/2/Full%20text.pdf
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spelling	my-unimap-331362014-03-26T04:34:21Z Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization Siti Fatimah, Abd Rahman This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. Prior to actual fabrication process, the SiNWs sensor is designed via Elphy Quantum GDS II Editor and AutoCAD. A total of four designs namely nanowire, alignment mark, electrode pad and test channel are designed in order to create a complete SiNWs sensor device. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which involved Scanning Electron Microscope (SEM) based Electron Beam Lithography (EBL) method. The effect of line width and exposure dose on the pattern structure is investigated experimentally using the negative photoresist ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50μC/cm2 to 180μC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks are well developed with dimension less than 100nm in width for the dose exposure parameters of 80μC/cm2, 100μC/cm2 and 120μC/cm2. Subsequently, the two metal electrodes which are designated as source and drain are fabricated on top of individual nanowire using conventional lithography process. Morphological, electrical and chemical characteristics have been proposed to verify the outcome of the fabricated device. The major parts are to observe the nanowire profile in order to meet the nano-scale dimension by using Hawk 3D-nanoprofiler and to test the device performance electrically by using Semiconductor Parametric Analyzer (SPA) in terms of I-V relations. It is found that, the smallest SiNW with diameter of 65nm is well aligned with electrode pads have been obtained. Finally, the fabricated device is performed as pH level detection. Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used to test the electrical response of the device. The SiNWs sensor show the highest resistance value for pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume ratio. Universiti Malaysia Perlis (UniMAP) 2011 Thesis en http://dspace.unimap.edu.my:80/dspace/handle/123456789/33136 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/1/Page%201-24.pdf fdf40755fe6e3194b9a94c97f194cd1f http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/2/Full%20text.pdf ae1efbaab8d180598a0f37ad51dbc665 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 Silicon Nanowires Nanotechnology Nanowires -- Design and construction Silicon nanowires (SiNWs) School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
topic	Silicon Nanowires Nanotechnology Nanowires -- Design and construction Silicon nanowires (SiNWs)
spellingShingle	Silicon Nanowires Nanotechnology Nanowires -- Design and construction Silicon nanowires (SiNWs) Siti Fatimah, Abd Rahman Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
description	This study demonstrates the process development of silicon nanowires (SiNWs) sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. Prior to actual fabrication process, the SiNWs sensor is designed via Elphy Quantum GDS II Editor and AutoCAD. A total of four designs namely nanowire, alignment mark, electrode pad and test channel are designed in order to create a complete SiNWs sensor device. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which involved Scanning Electron Microscope (SEM) based Electron Beam Lithography (EBL) method. The effect of line width and exposure dose on the pattern structure is investigated experimentally using the negative photoresist ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50μC/cm2 to 180μC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks are well developed with dimension less than 100nm in width for the dose exposure parameters of 80μC/cm2, 100μC/cm2 and 120μC/cm2. Subsequently, the two metal electrodes which are designated as source and drain are fabricated on top of individual nanowire using conventional lithography process. Morphological, electrical and chemical characteristics have been proposed to verify the outcome of the fabricated device. The major parts are to observe the nanowire profile in order to meet the nano-scale dimension by using Hawk 3D-nanoprofiler and to test the device performance electrically by using Semiconductor Parametric Analyzer (SPA) in terms of I-V relations. It is found that, the smallest SiNW with diameter of 65nm is well aligned with electrode pads have been obtained. Finally, the fabricated device is performed as pH level detection. Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used to test the electrical response of the device. The SiNWs sensor show the highest resistance value for pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume ratio.
format	Thesis
author	Siti Fatimah, Abd Rahman
author_facet	Siti Fatimah, Abd Rahman
author_sort	Siti Fatimah, Abd Rahman
title	Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
title_short	Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
title_full	Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
title_fullStr	Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
title_full_unstemmed	Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
title_sort	silicon nanowire sensor from electron beam lithography: design, fabrication and characterization
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	School of Microelectronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/33136/2/Full%20text.pdf
_version_	1747836803602186240

Silicon nanowire sensor from electron beam lithography: design, fabrication and characterization

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