Wearout reliability studies of bonding wires used in nano electronic device packaging

Conventional bare Cu bonding wires, in general, are more susceptible to moisture corrosion compared to gold (Au) and Cu wires. There is very limited knowledge based reliability studies which have been carried out on 1st level interconnect (ball bond in this matter) on nano device semiconductor pa...

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Main Author:	Gan, Chong Leong
Format:	Thesis
Language:	English
Subjects:	Bonding wires Wirebonding Copper wirebonding Cu Wires Bonding process
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/2/Full%20text.pdf
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spelling	my-unimap-594282019-04-10T04:42:29Z Wearout reliability studies of bonding wires used in nano electronic device packaging Gan, Chong Leong Prof. Dr. Uda Hashim Conventional bare Cu bonding wires, in general, are more susceptible to moisture corrosion compared to gold (Au) and Cu wires. There is very limited knowledge based reliability studies which have been carried out on 1st level interconnect (ball bond in this matter) on nano device semiconductor packages. The objective of this project is to evaluate the wearout reliability, apparent activation energy and Intermetallic compound (IMC) thickness growth of Au, Pd-coated Cu wire and Pd-doped Cu wire used in semiconductor packaging. Methodology of this work include investigation on the effects of bonding wires on wearout reliability of flash component, characterization of the apparent activation energy of IMC and HTSL test and formulation of the failure mechanisms in different wires. Wearout reliability of biased Highly Accelerated Temperature and Humidity Stress (HAST), unbiased HAST (UHAST), Temperature Cycling (TC) and High Temperature Storage Life (HTSL) have been characterized. Samples are loaded into each reliability chambers and stressed until wearout open failure. Weibull plot is plotted for each reliability stresses and for three wire types. First failure (tfirst), median-time-to-failure (t50) and characteristic life (t63.2) and weibull slope (β) are calculated accordingly. Next study includes applying thermal storage conditions at 150 °C, 175 °C and 200 °C at various intervals time. The apparent activation energy (Eaa) has been investigated for HTSL and IMC thickness growth of Au, Pd-coated Cu wire and Pd-doped Cu wire. Dispatch oven is used in HTSL test. Results indicated that the obtained weibull slope (β) of three wire types are greater than 1.0 and belong to wearout reliability data point. Pddoped copper wire exhibits larger time-to-failure and cycles-to-failure in HAST, UHAST and TC tests. This proves Palladium (Pd)-doped copper wire has a greater potential and higher reliability margin compared to Au and Pd-coated copper wires. Bare Cu wire is not observed with lowest wearout reliability performance. Intermetallic compound (IMC) diffusion kinetics has been established among the different bonding wires. Eaa obtained of Au ball bonds are ranging from 0.92 ~ 1.10 eV and 0.72 ~ 0.83 eV for Pd-coated Cu ball bonds in HTSL test. For IMC thickness growth study, Eaa obtained for CuAl IMC are 1.08 eV and 1.04 eV respectively with EMC A and EMC B. Eaa obtained are 1.04 eV and 0.98 eV respectively on EMC A and EMC B on AuAl IMC. Wire pull and ball bond shear strengths have been analyzed and we found smaller variation in Pd-doped copper wire compared to Au and Pd-doped copper wire. In conclusion, Au bonds were identified to have faster IMC formation, compared to slower intermetallic compound thickness growth compared to Pd-coated Cu wire and Pd-doped Cu wire. Universiti Malaysia Perlis (UniMAP) 2014 Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/59428 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/1/Page%201-24.pdf 145a5ecea6c466faab753c4bf3808aac http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/2/Full%20text.pdf ed827384ec57b1e9ffbbf536537407df http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/3/license.txt 8a4605be74aa9ea9d79846c1fba20a33 Bonding wires Wirebonding Copper wirebonding Cu Wires Bonding process Institute of Nano Electronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Prof. Dr. Uda Hashim
topic	Bonding wires Wirebonding Copper wirebonding Cu Wires Bonding process
spellingShingle	Bonding wires Wirebonding Copper wirebonding Cu Wires Bonding process Gan, Chong Leong Wearout reliability studies of bonding wires used in nano electronic device packaging
description	Conventional bare Cu bonding wires, in general, are more susceptible to moisture corrosion compared to gold (Au) and Cu wires. There is very limited knowledge based reliability studies which have been carried out on 1st level interconnect (ball bond in this matter) on nano device semiconductor packages. The objective of this project is to evaluate the wearout reliability, apparent activation energy and Intermetallic compound (IMC) thickness growth of Au, Pd-coated Cu wire and Pd-doped Cu wire used in semiconductor packaging. Methodology of this work include investigation on the effects of bonding wires on wearout reliability of flash component, characterization of the apparent activation energy of IMC and HTSL test and formulation of the failure mechanisms in different wires. Wearout reliability of biased Highly Accelerated Temperature and Humidity Stress (HAST), unbiased HAST (UHAST), Temperature Cycling (TC) and High Temperature Storage Life (HTSL) have been characterized. Samples are loaded into each reliability chambers and stressed until wearout open failure. Weibull plot is plotted for each reliability stresses and for three wire types. First failure (tfirst), median-time-to-failure (t50) and characteristic life (t63.2) and weibull slope (β) are calculated accordingly. Next study includes applying thermal storage conditions at 150 °C, 175 °C and 200 °C at various intervals time. The apparent activation energy (Eaa) has been investigated for HTSL and IMC thickness growth of Au, Pd-coated Cu wire and Pd-doped Cu wire. Dispatch oven is used in HTSL test. Results indicated that the obtained weibull slope (β) of three wire types are greater than 1.0 and belong to wearout reliability data point. Pddoped copper wire exhibits larger time-to-failure and cycles-to-failure in HAST, UHAST and TC tests. This proves Palladium (Pd)-doped copper wire has a greater potential and higher reliability margin compared to Au and Pd-coated copper wires. Bare Cu wire is not observed with lowest wearout reliability performance. Intermetallic compound (IMC) diffusion kinetics has been established among the different bonding wires. Eaa obtained of Au ball bonds are ranging from 0.92 ~ 1.10 eV and 0.72 ~ 0.83 eV for Pd-coated Cu ball bonds in HTSL test. For IMC thickness growth study, Eaa obtained for CuAl IMC are 1.08 eV and 1.04 eV respectively with EMC A and EMC B. Eaa obtained are 1.04 eV and 0.98 eV respectively on EMC A and EMC B on AuAl IMC. Wire pull and ball bond shear strengths have been analyzed and we found smaller variation in Pd-doped copper wire compared to Au and Pd-doped copper wire. In conclusion, Au bonds were identified to have faster IMC formation, compared to slower intermetallic compound thickness growth compared to Pd-coated Cu wire and Pd-doped Cu wire.
format	Thesis
author	Gan, Chong Leong
author_facet	Gan, Chong Leong
author_sort	Gan, Chong Leong
title	Wearout reliability studies of bonding wires used in nano electronic device packaging
title_short	Wearout reliability studies of bonding wires used in nano electronic device packaging
title_full	Wearout reliability studies of bonding wires used in nano electronic device packaging
title_fullStr	Wearout reliability studies of bonding wires used in nano electronic device packaging
title_full_unstemmed	Wearout reliability studies of bonding wires used in nano electronic device packaging
title_sort	wearout reliability studies of bonding wires used in nano electronic device packaging
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	Institute of Nano Electronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/59428/2/Full%20text.pdf
_version_	1747836837178638336

Wearout reliability studies of bonding wires used in nano electronic device packaging

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