The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance

The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power sw...

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Format:	Thesis
Language:	English
Subjects:	Semiconductors Silicon-on-insulator technology Electric discharges
Online Access:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf
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spelling	my-unimap-766292022-10-26T01:10:47Z The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr. The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power switching diode to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In this thesis, the design structure of P-i-N power switching diode consist of a circular shape anode junction, an n-type bulk substrate and the epitaxial layer of silicon substrate that represent the intrinsic region is used. Two different type of reverse breakdown voltage range P-i-N power switching diode are discussed in this thesis which is 250 V and 300 V. Independently, the optimization of reverse breakdown voltage and ESD respectively is conducted using 250 V and 300 V respectively as both diode have different good and poor electrical performance. The improvement of both diodes are performed by process simulation and as well as the confirmation by the design of experiment (DOE) of physical wafers fabrication process. For the ESD analysis, the devices are then subjected to nondestructive and destructive test of the fabricated diodes. Initially, this thesis describes the research work to widen the operating range of the 250 V P-i-N power switching avalanche diodes that can be operated more than 300 V by exploring the effects of the thickness and resistivity of epitaxial layer during forward and reverse biasing. Purpose of widen the operating range is to be used in power distribution application instead of telecommunication application. The result shows that, the changes on a P-i-N type structure of the power switching avalanche diode can increase the reverse breakdown voltage performance to ~500 V, which is beyond 300 V during reverse bias. The improvement of reverse breakdown voltage is more than 65% from 250 V. In addition to the electrical characteristics operating range improvement in the thesis, the study of ESD improvement of 300 V reverse breakdown voltage P-i-N diode is demonstrated. A better ESD performance of the P-i-N diode is also achieved by changing the characteristic profile of the P+ anode junction of P-i-N diode. The characteristics profiles are altered by lightening the dopant concentration and increasing the depth of the P-i-N diode junction. It is found that, the 300V P-i-N power switching diode can sustain more than 1 kV during ESD Human Body Modal (HBM) surge test (400% higher from initial surge) and more than 400 V during ESD Machine Modal (MM) surge test (100% higher from initial surge). Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76629 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/4/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf 2de1e31cf9423f09185934e382ffe914 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf 5780d0898e6450d7531651410684efa7 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf 110af5a772391fb5d3223b59ac5ab58d Universiti Malaysia Perlis (UniMAP) Semiconductors Silicon-on-insulator technology Electric discharges Diodes, Switching Institute of Nano Electronic Engineering
institution	Universiti Malaysia Perlis
collection	UniMAP Institutional Repository
language	English
advisor	Mohd Khairuddin, Md Arshad, Assoc. Prof. Ir. Dr.
topic	Semiconductors Silicon-on-insulator technology Electric discharges Semiconductors
spellingShingle	Semiconductors Silicon-on-insulator technology Electric discharges Semiconductors The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
description	The Power switching diode (P-i-N diode) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and better electrostatic discharge (ESD) performance. As a result, the exploration on the P-i-N power switching diode to make the device more robust and competitive in the market is boundless, which aims for continuous improvement on the electrical characteristics. In this thesis, the design structure of P-i-N power switching diode consist of a circular shape anode junction, an n-type bulk substrate and the epitaxial layer of silicon substrate that represent the intrinsic region is used. Two different type of reverse breakdown voltage range P-i-N power switching diode are discussed in this thesis which is 250 V and 300 V. Independently, the optimization of reverse breakdown voltage and ESD respectively is conducted using 250 V and 300 V respectively as both diode have different good and poor electrical performance. The improvement of both diodes are performed by process simulation and as well as the confirmation by the design of experiment (DOE) of physical wafers fabrication process. For the ESD analysis, the devices are then subjected to nondestructive and destructive test of the fabricated diodes. Initially, this thesis describes the research work to widen the operating range of the 250 V P-i-N power switching avalanche diodes that can be operated more than 300 V by exploring the effects of the thickness and resistivity of epitaxial layer during forward and reverse biasing. Purpose of widen the operating range is to be used in power distribution application instead of telecommunication application. The result shows that, the changes on a P-i-N type structure of the power switching avalanche diode can increase the reverse breakdown voltage performance to ~500 V, which is beyond 300 V during reverse bias. The improvement of reverse breakdown voltage is more than 65% from 250 V. In addition to the electrical characteristics operating range improvement in the thesis, the study of ESD improvement of 300 V reverse breakdown voltage P-i-N diode is demonstrated. A better ESD performance of the P-i-N diode is also achieved by changing the characteristic profile of the P+ anode junction of P-i-N diode. The characteristics profiles are altered by lightening the dopant concentration and increasing the depth of the P-i-N diode junction. It is found that, the 300V P-i-N power switching diode can sustain more than 1 kV during ESD Human Body Modal (HBM) surge test (400% higher from initial surge) and more than 400 V during ESD Machine Modal (MM) surge test (100% higher from initial surge).
format	Thesis
title	The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
title_short	The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
title_full	The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
title_fullStr	The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
title_full_unstemmed	The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
title_sort	optimization of p-i-n power switching diode in term of reverse breakdown voltage and electrostatic disharge performance
granting_institution	Universiti Malaysia Perlis (UniMAP)
granting_department	Institute of Nano Electronic Engineering
url	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76629/3/Declaration%20Form.pdf
_version_	1776104268421398528

The optimization of P-i-N power switching diode in term of reverse breakdown voltage and electrostatic disharge performance

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