Synthesis of silicone carbide nanowhiskers by microwave irradiation method

This work described the synthesis of silicon carbide nanowhiskers (SiCNWs) by using the microwave heating.. The main objective of this project is to study the feasibility of synthesis of SiCNWs from expanded graphite (EG) and silica using microwaves heating. Several parameters were studied such a...

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spelling my-unimap-767292022-11-08T02:44:20Z Synthesis of silicone carbide nanowhiskers by microwave irradiation method Voon, Chun Hong, Dr. This work described the synthesis of silicon carbide nanowhiskers (SiCNWs) by using the microwave heating.. The main objective of this project is to study the feasibility of synthesis of SiCNWs from expanded graphite (EG) and silica using microwaves heating. Several parameters were studied such as the effect of ratio of graphite and silica, heating temperature, heating duration and types of graphite on the formation of SiCNWs in term of morphology, compositions, optical properties and purity. In this study, SiCNWs was synthesized by microwave heating mixture of EG and silica and the effect of processing parameters on the synthesis were studied. For effect of ratio of EG and silica, the mixture of EG and silica with the ratio 1:3 was found to be suitable for the synthesis of SiCNWs because the formation of high purity β-SiC nanowhiskers. Mixture of silica and EG with the ratios 1:5 and 1:7 had the traces of unreacted graphite. Study of effect of heating temperature revealed a temperature at 1400 ºC is suitable for the synthesis of SiCNWs. β-SiC appeared as the only phase in the XRD pattern of SiCNWs formed at 1400˚C. FESEM imaging confirmed the presence of only a negligible amount of graphite or silica in SiCNWs synthesized at 1400˚C. Meanwhile, PL spectrum indicated the presence of single phase β-SiC peak at 440 nm which is associated with band gap of 2.8 eV. Single absorption bands of Si-C bond were detected at 803.5 cm-1 in FTIR analysis. SiCNWs produced in this study at 1400˚C has good thermal stability with 6% of weight loss. Effect of heating duration was also studied and 40 minutes was found to be the most ideal heating duration for the synthesis of SiCNWs. β-SiC appeared as the only phase in the XRD pattern for SiCNWs formed by using 40 and 60 minutes of heating duration with no traces of unreacted silica and graphite. FESEM imaging confirmed that no trace of graphite or silica was present in SiCNWs synthesized at heating duration of 40 and 60 minutes. SiCNWs produced by heating at 40 and 60 minutes have high thermal stability with weight loss lower than 6%. It was found that SiC nanowhiskers (SiCNWs) were formed when EG was used as the starting material, while SiC nanoparticles (SiCNPs) were formed when FG was used. β-SiC appeared as the only phase in the x-ray diffraction pattern for SiCNMs formed by FG and EG. FESEM confirmed that no trace of graphite or silica was present in both SiCNWs and SiCNPs. Meanwhile, photoluminescence spectra show the presence of β-SiC peak at 440 nm and associated with band gap of 2.8 eV for both SiCNWs and SiCNPs. Absorption bands of Si-C bond were detected at 803.4 cm-1 for SiCNPs and 802.5 cm-1 for SiCNWs in the FTIR spectra. SiCNWs and SiCNPs have high thermal stability with weight loss less than 6 %. In conclusion, SiCNWs and SiCNPs have been successfully synthesized through the microwave heating of a mixture of silica/EG and silica/FG in an argon atmosphere. Universiti Malaysia Perlis (UniMAP) Thesis en http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76729 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/4/license.txt 8a4605be74aa9ea9d79846c1fba20a33 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/1/Page%201-24.pdf 234a608021753c757a598ab2d9fb9dad http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/2/Full%20text.pdf 62fe7b7e3aefbbbf9cc9e9fcbd0a2d87 http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/3/Declaration%20Form.pdf 58629f3f570d53165b35f9dbc5a24c26 Universiti Malaysia Perlis (UniMAP) Silicon carbide Silica Silicon compounds Microwave heating Nanotechnology Institute of Nano Electronic Engineering
institution Universiti Malaysia Perlis
collection UniMAP Institutional Repository
language English
advisor Voon, Chun Hong, Dr.
topic Silicon carbide
Silica
Silicon compounds
Microwave heating
Nanotechnology
spellingShingle Silicon carbide
Silica
Silicon compounds
Microwave heating
Nanotechnology
Synthesis of silicone carbide nanowhiskers by microwave irradiation method
description This work described the synthesis of silicon carbide nanowhiskers (SiCNWs) by using the microwave heating.. The main objective of this project is to study the feasibility of synthesis of SiCNWs from expanded graphite (EG) and silica using microwaves heating. Several parameters were studied such as the effect of ratio of graphite and silica, heating temperature, heating duration and types of graphite on the formation of SiCNWs in term of morphology, compositions, optical properties and purity. In this study, SiCNWs was synthesized by microwave heating mixture of EG and silica and the effect of processing parameters on the synthesis were studied. For effect of ratio of EG and silica, the mixture of EG and silica with the ratio 1:3 was found to be suitable for the synthesis of SiCNWs because the formation of high purity β-SiC nanowhiskers. Mixture of silica and EG with the ratios 1:5 and 1:7 had the traces of unreacted graphite. Study of effect of heating temperature revealed a temperature at 1400 ºC is suitable for the synthesis of SiCNWs. β-SiC appeared as the only phase in the XRD pattern of SiCNWs formed at 1400˚C. FESEM imaging confirmed the presence of only a negligible amount of graphite or silica in SiCNWs synthesized at 1400˚C. Meanwhile, PL spectrum indicated the presence of single phase β-SiC peak at 440 nm which is associated with band gap of 2.8 eV. Single absorption bands of Si-C bond were detected at 803.5 cm-1 in FTIR analysis. SiCNWs produced in this study at 1400˚C has good thermal stability with 6% of weight loss. Effect of heating duration was also studied and 40 minutes was found to be the most ideal heating duration for the synthesis of SiCNWs. β-SiC appeared as the only phase in the XRD pattern for SiCNWs formed by using 40 and 60 minutes of heating duration with no traces of unreacted silica and graphite. FESEM imaging confirmed that no trace of graphite or silica was present in SiCNWs synthesized at heating duration of 40 and 60 minutes. SiCNWs produced by heating at 40 and 60 minutes have high thermal stability with weight loss lower than 6%. It was found that SiC nanowhiskers (SiCNWs) were formed when EG was used as the starting material, while SiC nanoparticles (SiCNPs) were formed when FG was used. β-SiC appeared as the only phase in the x-ray diffraction pattern for SiCNMs formed by FG and EG. FESEM confirmed that no trace of graphite or silica was present in both SiCNWs and SiCNPs. Meanwhile, photoluminescence spectra show the presence of β-SiC peak at 440 nm and associated with band gap of 2.8 eV for both SiCNWs and SiCNPs. Absorption bands of Si-C bond were detected at 803.4 cm-1 for SiCNPs and 802.5 cm-1 for SiCNWs in the FTIR spectra. SiCNWs and SiCNPs have high thermal stability with weight loss less than 6 %. In conclusion, SiCNWs and SiCNPs have been successfully synthesized through the microwave heating of a mixture of silica/EG and silica/FG in an argon atmosphere.
format Thesis
title Synthesis of silicone carbide nanowhiskers by microwave irradiation method
title_short Synthesis of silicone carbide nanowhiskers by microwave irradiation method
title_full Synthesis of silicone carbide nanowhiskers by microwave irradiation method
title_fullStr Synthesis of silicone carbide nanowhiskers by microwave irradiation method
title_full_unstemmed Synthesis of silicone carbide nanowhiskers by microwave irradiation method
title_sort synthesis of silicone carbide nanowhiskers by microwave irradiation method
granting_institution Universiti Malaysia Perlis (UniMAP)
granting_department Institute of Nano Electronic Engineering
url http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/1/Page%201-24.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/2/Full%20text.pdf
http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/76729/3/Declaration%20Form.pdf
_version_ 1776104272495116288