Junctionless transistors: parametric study with conventional doping in MOSFETS

Junctionless transistors: parametric study with conventional doping in MOSFETS

The advancement of today technologies has been aggressively developed as the needs of current technology that becoming competitive and demanding to accommodate human lifestyle. The electronic gadgets drive the market with the requirements to provide efficient chip functionality at higher speed and e...

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书目详细资料
格式:	Thesis
语言:	English
主题:	Metal oxide semiconductor field-effect transistors Ultra-shallow junction Junctionless Transistor
在线阅读:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77894/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77894/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77894/4/Nurul%20Huda.pdf
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