Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS

The downscaling of transistors enables an increased in transistor density, faster switching speeds and greater complexity with no increase in power consumption. However, the scaling of the conventional planar MOS transistors appears to be reaching the end of the technology roadmap due to worsening...

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書目詳細資料
格式:	Thesis
語言:	English
主題:	Metal oxide semiconductors Complementary Electric insulators and insulation Metal oxide semiconductor field-effect transistors Silicon-on-insulator (SOI)
在線閱讀:	http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/4/Noraini%20Othman.pdf
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