Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS
The downscaling of transistors enables an increased in transistor density, faster switching speeds and greater complexity with no increase in power consumption. However, the scaling of the conventional planar MOS transistors appears to be reaching the end of the technology roadmap due to worsening...
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| 格式: | Thesis |
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| 语言: | English |
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| 在线阅读: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/77998/4/Noraini%20Othman.pdf |
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