Preparation Of Tin Selenide Thin Film Semiconductor By Electrochemical Deposition And Electroselenisation
Electrochemical preparation of tin selenide thin film semiconductor for photoelectrochemical cells (PECs) was studied. The film has been potentiostatically deposited on tin substrate at room temperature from aqueous solution containing SnCl2 and Na2SeO3. The effect of the electrodeposition potent...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English English |
| منشور في: |
2000
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://psasir.upm.edu.my/id/eprint/11412/1/FSAS_2000_10.pdf |
| الوسوم: |
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| الملخص: | Electrochemical preparation of tin selenide thin film semiconductor for
photoelectrochemical cells (PECs) was studied. The film has been potentiostatically
deposited on tin substrate at room temperature from aqueous solution containing
SnCl2 and Na2SeO3. The effect of the electrodeposition potentials and bath
electrolytes concentrations proportion were investigated to determine the optimum
condition for electrodeposition. The structure, morphology and the photosensitivity
of the electrosynthesised samples were studied by using X-ray diffiaction, scanning
electron microscopy (SEM) and linear sweep voltammetry techniques. The bandgap
energy and type of optical transition were determined from optical absorbance data.
The X-ray diffraction analysis confirmed the formation of polycrystalline SnSe on
the tin substrate. Scanning electron microscopy reaffirmed the existence of a
crystalline deposit with different grain size and shape. The films prepared in this
study showed a p-type semiconductor behaviour with very good photosensitivity. |
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