Preparation of Porous Silicon by Electrochemical Etching in the Fabrication of a Solar Cell
Porous silicon samples have been prepared using electrochemical etching technique. In this project, a 3 cm x 5cm single crystal p-type silicon wafer <422>, resistivity 19.64 Ωcm with thickness of 200µm was used to prepare porous silicon. The silicon was etched in an aqueous solution at the...
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Format: | Thesis |
Language: | English English |
Published: |
2003
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Subjects: | |
Online Access: | http://psasir.upm.edu.my/id/eprint/9600/1/FSAS_2003_52_IR.pdf |
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Summary: | Porous silicon samples have been prepared using electrochemical etching
technique. In this project, a 3 cm x 5cm single crystal p-type silicon wafer <422>,
resistivity 19.64 Ωcm with thickness of 200µm was used to prepare porous silicon. The
silicon was etched in an aqueous solution at the current density of 5 mA/cm² for 30
minutes under illumination of a 1OOW halogen lamp at room temperature. The SEM,
EDAX and XRD analysis were carried out to exhibit the physical properties of porous
silicon. Then the porous silicon was doped with n-type material (Sb) and diffused at
temperature of 600°C for 15 minutes to form p-n junction. The prepared sample was
deposited with Aluminium at back and front of the sample to form electrical contact.
The porous silicon solar cells were measured for efficiency using a sun simulator. From
the SEM analysis, the morphology exhibit the island type surface and EDAX analysis
which shows oxide layers are mainly incorporated near the surface of porous silicon.
The XRD results revealed that the peak had widened and x-ray counts increased. Finally, an efficiency measurement was conducted to determine the efficiency of the designed
porous silicon cell. The highest efficiency percentage achieved for prepared porous
silicon cell is 10.5% only compared to current solar cells GaAs which can achieve up to
31.0% percent. |
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