Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iin...
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| Format: | Thesis |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.usm.my/28916/1/INVESTIGATION_OF_METAL_ORGANIC_DECOMPOSED_MOD_CERIUM_OXIDE.pdf |
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| Summary: | Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on
n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam
telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam
Iinkungan 45-90 run. |
|---|