Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique

Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iin...

Full description

Saved in:
Bibliographic Details
Main Author: Quah, Hock Jin
Format: Thesis
Language:English
Published: 2010
Subjects:
TN1-997 Mining engineering
Metallurgy
Online Access:http://eprints.usm.my/28916/1/INVESTIGATION_OF_METAL_ORGANIC_DECOMPOSED_MOD_CERIUM_OXIDE.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!
id my-usm-ep.28916
record_format uketd_dc
spelling my-usm-ep.289162017-05-15T08:05:02Z Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique 2010 Quah, Hock Jin TN1-997 Mining engineering. Metallurgy Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iinkungan 45-90 run. 2010 Thesis http://eprints.usm.my/28916/ http://eprints.usm.my/28916/1/INVESTIGATION_OF_METAL_ORGANIC_DECOMPOSED_MOD_CERIUM_OXIDE.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TN1-997 Mining engineering
Metallurgy
spellingShingle TN1-997 Mining engineering
Metallurgy
Quah, Hock Jin
Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
description Metal-organic decomposed (MOD) Ce(h precursor has been spin coated on n-type Si and n-type GaN substrates with thickness in the range of 45-90 nm. Prapenanda Ce02 yang disediakan dengan teknik penguraian organik logam telah diserakkan ke atas wafer Si dan GaN beljenis n dengan ketebalan dalam Iinkungan 45-90 run.
format Thesis
qualification_level Master's degree
author Quah, Hock Jin
author_facet Quah, Hock Jin
author_sort Quah, Hock Jin
title Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
title_short Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
title_full Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
title_fullStr Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
title_full_unstemmed Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
title_sort investigation of metal-organic decomposed (mod) cerium oxide (ceo2) gate deposited on silicon and gallium nitride substrates via spin-on coating technique
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate 2010
url http://eprints.usm.my/28916/1/INVESTIGATION_OF_METAL_ORGANIC_DECOMPOSED_MOD_CERIUM_OXIDE.pdf
_version_ 1747820040997044224

Similar Items