Development Of SiO2 On 4H-SiC By Direct Thermal Oxidation And Post Oxidation Annealing In HNO3 & H2O Vapour
The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications. Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/...
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| Format: | Thesis |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://eprints.usm.my/29000/1/DEVELOPMENT_OF_SiO2_ON_4H-SiC_BY_DIRECT_THERMAL_OXIDATION_AND_POST_OXIDATION_ANNEALING_IN_HNO3_%26_H2O_VAPOUR.pdf |
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| Summary: | The need to thermally grow a thick SiO2 film (>50 nm) with high breakdown voltage (> 5 MV/cm at 1 uA/cm2) is crucial for high power devices (> 600 V) applications.
Keperluan menghasilkan filem tebal SiO2(> 50 nm) dengan keupayaan pecahan voltan yang lebih tinggi (> 5 MV/cm pada 1 uA/cm2) melalui kaedah pengoksidaan terma adalah sangat penting bagi aplikasi peranti kuasa tinggi (> 600 V). |
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