Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics

Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics

n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel...

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Main Author: Mohd Rashid, Mohd Marzaini
Format: Thesis
Language:English
Published: 2012
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf
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spelling my-usm-ep.290622019-04-12T05:26:25Z Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics 2012 Mohd Rashid, Mohd Marzaini QC1 Physics (General) n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel length is used in this work. Fabrikasi transistor semikonduktor logam oksida kesan medan saluran n-silikon, “nchannel metal oxide semiconductor field effect transistor (n-MOSFET)” memerlukan teknologi khusus dan berkos tinggi seperti penanam ion, endapan wap kimia dan gas-gas berbahaya seperti silane, asid hidroklorik dan hidrogen. Topeng foto berkos rendah dengan lebar saluran 35 μm digunakan di dalam projek ini. 2012 Thesis http://eprints.usm.my/29062/ http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Mohd Rashid, Mohd Marzaini
Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
description n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel length is used in this work. Fabrikasi transistor semikonduktor logam oksida kesan medan saluran n-silikon, “nchannel metal oxide semiconductor field effect transistor (n-MOSFET)” memerlukan teknologi khusus dan berkos tinggi seperti penanam ion, endapan wap kimia dan gas-gas berbahaya seperti silane, asid hidroklorik dan hidrogen. Topeng foto berkos rendah dengan lebar saluran 35 μm digunakan di dalam projek ini.
format Thesis
qualification_level Master's degree
author Mohd Rashid, Mohd Marzaini
author_facet Mohd Rashid, Mohd Marzaini
author_sort Mohd Rashid, Mohd Marzaini
title Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
title_short Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
title_full Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
title_fullStr Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
title_full_unstemmed Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
title_sort silicon n-channel metal oxide semiconductor field effect transistor fabrication and its effect on output characteristics
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2012
url http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf
_version_ 1747820073331982336

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