Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH)...

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Main Author:	Abdullah, Ahmad Makarimi
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TN263-271 Mineral deposits Metallic ore deposits Prospecting
Online Access:	http://eprints.usm.my/41025/1/AHMAD_MAKARIMI_BIN_ABDULLAH_24_Pages.pdf
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id	my-usm-ep.41025
record_format	uketd_dc
spelling	my-usm-ep.410252018-07-12T08:14:54Z Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography 2012 Abdullah, Ahmad Makarimi TN263-271 Mineral deposits. Metallic ore deposits. Prospecting Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. The patterned structure (as oxide mask) was etched through two steps of wet etching processes. First, the potassium hydroxide (KOH) and isopropyl alcohol (IPA) were used as the etchant solution for silicon removing. It was found that etchant solution of 30 wt% KOH + 10 vol% IPA, etching time of 22 seconds and solution temperature of 65 oC as an optimum etching parameters. In the second step, diluted HF was used to remove oxide mask in order to produce a completed SiNWT device. The fabricated SiNWT was characterized by AFM, SEM, EDX, 3D laser microscope, FIB-TEM and semiconductor parameter analyzer. From current-voltage characteristics, it was proven that the device is working as a p-type SiNWT. 2012 Thesis http://eprints.usm.my/41025/ http://eprints.usm.my/41025/1/AHMAD_MAKARIMI_BIN_ABDULLAH_24_Pages.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan dan Sumber Mineral
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TN263-271 Mineral deposits Metallic ore deposits Prospecting
spellingShingle	TN263-271 Mineral deposits Metallic ore deposits Prospecting Abdullah, Ahmad Makarimi Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
description	Silicon nanowire transistor (SiNWT) has been successfully fabricated by atomic force microscopy (AFM) lithography through wet etching process. The silicon on insulator (SOI) <100> wafer was used as a starting material. Prior to use, the SOI wafer was cleaned by using ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), nitric acid (HNO3) and Di-Ionize water (DIW) and diluted hydrofluoric acid (HF) to remove the organic, inorganic contaminants and native oxide from the wafer surface. A non-contact AFM mode was chosen to perform the AFM lithography process on pre-cleaned SOI wafer. The SiNWT structure was designed by using raster programming. A conductive AFM tip (Cr/Pt cantilever tip) was used to fabricate SiNWT patterns on the SOI surface based on pre-designed structures. The patterned structure (as oxide mask) was etched through two steps of wet etching processes. First, the potassium hydroxide (KOH) and isopropyl alcohol (IPA) were used as the etchant solution for silicon removing. It was found that etchant solution of 30 wt% KOH + 10 vol% IPA, etching time of 22 seconds and solution temperature of 65 oC as an optimum etching parameters. In the second step, diluted HF was used to remove oxide mask in order to produce a completed SiNWT device. The fabricated SiNWT was characterized by AFM, SEM, EDX, 3D laser microscope, FIB-TEM and semiconductor parameter analyzer. From current-voltage characteristics, it was proven that the device is working as a p-type SiNWT.
format	Thesis
qualification_level	Master's degree
author	Abdullah, Ahmad Makarimi
author_facet	Abdullah, Ahmad Makarimi
author_sort	Abdullah, Ahmad Makarimi
title	Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_short	Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_full	Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_fullStr	Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_full_unstemmed	Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
title_sort	optimization of potassium hydroxide (koh) etching on the fabrication of p-type silicon nanowire transistor patterned by atomic force microscopy lithography
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuruteraan Bahan dan Sumber Mineral
publishDate	2012
url	http://eprints.usm.my/41025/1/AHMAD_MAKARIMI_BIN_ABDULLAH_24_Pages.pdf
_version_	1747820863344869376

Optimization Of Potassium Hydroxide (Koh) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography

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