Fast Transient Simulations From S-Parameters With Improved Reference Impedance

As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time...

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Main Author:	Khairulzaman, Mohd Ridzuan
Format:	Thesis
Language:	English
Published:	2015
Subjects:	TK7800-8360 Electronics
Online Access:	http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf
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id	my-usm-ep.41223
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spelling	my-usm-ep.412232018-08-01T07:38:08Z Fast Transient Simulations From S-Parameters With Improved Reference Impedance 2015 Khairulzaman, Mohd Ridzuan TK7800-8360 Electronics As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time to complete. Hence, a fast transient simulation is utilized based on scattering parameter (S-parameter) convolution. This alternative approach to the S-parameter offers stability, efficiency and robust computation. In this research, the S-parameter frequency domain convolution was presented, which was later converted to impulse response or time domain data using the inverse Fast Fourier Transform (IFFT) algorithm for the fast transient simulation of multiport interconnect network or typically addressed as a black box model. Subsequently, the S-parameter convolution can be further improved by optimizing the reference system of the model. An improvement by 64% and 29.5% of IFFT point usage numbers with Black Box 1 and Black Box 2. These results respectively were obtained based on optimal reference impedance assigned in S-parameter synthesis on black box models, thus speeding up the convolution program, compared to the nominal reference impedance of 50Ω used to perform the fast transient simulation. Besides, the optimization routine implemented on the design has smoothed the magnitude of the waveform and there is no significant effect observed on the time domain response. 2015 Thesis http://eprints.usm.my/41223/ http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Elektrik dan Elektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TK7800-8360 Electronics
spellingShingle	TK7800-8360 Electronics Khairulzaman, Mohd Ridzuan Fast Transient Simulations From S-Parameters With Improved Reference Impedance
description	As a design becomes more sophisticated, analyzing it becomes more complicated, and supporting high data speeds and high operating frequencies becomes more challenging. Conventional transient simulation can be a troublesome and a computationally expensive procedure, as the process takes a long time to complete. Hence, a fast transient simulation is utilized based on scattering parameter (S-parameter) convolution. This alternative approach to the S-parameter offers stability, efficiency and robust computation. In this research, the S-parameter frequency domain convolution was presented, which was later converted to impulse response or time domain data using the inverse Fast Fourier Transform (IFFT) algorithm for the fast transient simulation of multiport interconnect network or typically addressed as a black box model. Subsequently, the S-parameter convolution can be further improved by optimizing the reference system of the model. An improvement by 64% and 29.5% of IFFT point usage numbers with Black Box 1 and Black Box 2. These results respectively were obtained based on optimal reference impedance assigned in S-parameter synthesis on black box models, thus speeding up the convolution program, compared to the nominal reference impedance of 50Ω used to perform the fast transient simulation. Besides, the optimization routine implemented on the design has smoothed the magnitude of the waveform and there is no significant effect observed on the time domain response.
format	Thesis
qualification_level	Master's degree
author	Khairulzaman, Mohd Ridzuan
author_facet	Khairulzaman, Mohd Ridzuan
author_sort	Khairulzaman, Mohd Ridzuan
title	Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_short	Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_full	Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_fullStr	Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_full_unstemmed	Fast Transient Simulations From S-Parameters With Improved Reference Impedance
title_sort	fast transient simulations from s-parameters with improved reference impedance
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuruteraan Elektrik dan Elektronik
publishDate	2015
url	http://eprints.usm.my/41223/1/MOHD_RIDZUAN_BIN_KHAIRULZAMAN_24_Pages.pdf
_version_	1747820891257962496

Fast Transient Simulations From S-Parameters With Improved Reference Impedance

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