DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...

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Main Author:	Munir, Tariq
Format:	Thesis
Language:	English
Published:	2011
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf
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id	my-usm-ep.42797
record_format	uketd_dc
spelling	my-usm-ep.427972019-04-12T05:26:40Z DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application 2011-01 Munir, Tariq QC1 Physics (General) Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critical factors are the reverse leakage current, series resistance, junction capacitance and thermal stability that limits Schottky diode performance on gallium nitride for Direct Current (DC) and Radio Frequency (RF) characteristics. To overcome these limitations we studied the influence of metal contact, contact area, thermal behavior and edge termination on DC and RF characteristics of n-GaN Schottky diode by simulation and fabrication approach. 2011-01 Thesis http://eprints.usm.my/42797/ http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Munir, Tariq DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
description	Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critical factors are the reverse leakage current, series resistance, junction capacitance and thermal stability that limits Schottky diode performance on gallium nitride for Direct Current (DC) and Radio Frequency (RF) characteristics. To overcome these limitations we studied the influence of metal contact, contact area, thermal behavior and edge termination on DC and RF characteristics of n-GaN Schottky diode by simulation and fabrication approach.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Munir, Tariq
author_facet	Munir, Tariq
author_sort	Munir, Tariq
title	DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
title_short	DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
title_full	DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
title_fullStr	DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
title_full_unstemmed	DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
title_sort	dc and rf characterization of n-gan schottky diode for microwave application
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2011
url	http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf
_version_	1747821102397128704

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

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