A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors

An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The ro...

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主要作者: Cheah , Chun Yee
格式: Thesis
語言:English
出版: 2010
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spelling my-usm-ep.429122019-04-12T05:26:50Z A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors 2010-06 Cheah , Chun Yee QC1 Physics (General) An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The rod-like defects are suggested to consist of selfinterstitials in the silicon lattice. The defects were reduced by optimizing the scattering oxide growth prior to implantation. Phenomenological models are then proposed to explain how self-interstitials were reduced by process optimization. Oxidation was performed in dry ambient and above the viscous flow temperature to relieve the interfacial stress during oxide growth. It is suggested that by doing so, interstitial injection into silicon is eliminated. 2010-06 Thesis http://eprints.usm.my/42912/ http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Cheah , Chun Yee
A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
description An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The rod-like defects are suggested to consist of selfinterstitials in the silicon lattice. The defects were reduced by optimizing the scattering oxide growth prior to implantation. Phenomenological models are then proposed to explain how self-interstitials were reduced by process optimization. Oxidation was performed in dry ambient and above the viscous flow temperature to relieve the interfacial stress during oxide growth. It is suggested that by doing so, interstitial injection into silicon is eliminated.
format Thesis
qualification_level Master's degree
author Cheah , Chun Yee
author_facet Cheah , Chun Yee
author_sort Cheah , Chun Yee
title A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
title_short A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
title_full A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
title_fullStr A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
title_full_unstemmed A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
title_sort study on process-generated crystal defects and corresponding leakage current of p-n junctions in bipolar transistors
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2010
url http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf
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