Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique.
Pembentukan silikon berstruktur nano melalui teknik pengewapan terma telah dikaji dengan fungsi suhu penyepuhlindap dan pemangkin yang memainkan peranan penting dalam proses ini. Serbuk silikon sebagai bahan mentah telah digunakan bagi membolehkan pengewapan berlaku pada suhu yang tinggi (900-1100oC...
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2011
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my-usm-ep.431062018-12-05T03:04:53Z Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. 2011-03 Adnan, Mohd Azam Mohd TN1-997 Mining engineering. Metallurgy Pembentukan silikon berstruktur nano melalui teknik pengewapan terma telah dikaji dengan fungsi suhu penyepuhlindap dan pemangkin yang memainkan peranan penting dalam proses ini. Serbuk silikon sebagai bahan mentah telah digunakan bagi membolehkan pengewapan berlaku pada suhu yang tinggi (900-1100oC) dalam aliran gas argon (Ar). The formation of silicon nanostructures, via thermal evaporation techniques, was studied as a function of annealing temperature and catalyst (Au and AuPd).The silicon powder, serving as the starting source material, was evaporated at a high temperature (900-1100°C) in the flow of argon gas. 2011-03 Thesis http://eprints.usm.my/43106/ http://eprints.usm.my/43106/1/Pages_from_EFFECT_OF_GROWTH_TEMPERATURE_AND_CATALYST_ON.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral |
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Universiti Sains Malaysia |
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USM Institutional Repository |
language |
English |
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TN1-997 Mining engineering Metallurgy |
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TN1-997 Mining engineering Metallurgy Adnan, Mohd Azam Mohd Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
description |
Pembentukan silikon berstruktur nano melalui teknik pengewapan terma telah dikaji dengan fungsi suhu penyepuhlindap dan pemangkin yang memainkan peranan penting dalam proses ini. Serbuk silikon sebagai bahan mentah telah digunakan bagi membolehkan pengewapan berlaku pada suhu yang tinggi (900-1100oC) dalam aliran gas argon (Ar).
The formation of silicon nanostructures, via thermal evaporation techniques, was studied as a function of annealing temperature and catalyst (Au and AuPd).The silicon powder, serving as the starting source material, was evaporated at a high temperature (900-1100°C) in the flow of argon gas. |
format |
Thesis |
qualification_level |
Master's degree |
author |
Adnan, Mohd Azam Mohd |
author_facet |
Adnan, Mohd Azam Mohd |
author_sort |
Adnan, Mohd Azam Mohd |
title |
Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
title_short |
Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
title_full |
Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
title_fullStr |
Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
title_full_unstemmed |
Effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
title_sort |
effect of growth temperature and catalyst on the formation of one-dimensional silicon nanostructures via thermal evaporation technique. |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral |
publishDate |
2011 |
url |
http://eprints.usm.my/43106/1/Pages_from_EFFECT_OF_GROWTH_TEMPERATURE_AND_CATALYST_ON.pdf |
_version_ |
1747821165509869568 |