The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering

Zinc Oxide (ZnO) is an attractive semiconductor for various applications due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Thus, realization of reproducible and good p-type ZnO is important for the formation of homo p-n junction in electronic and opto-electronic dev...

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Main Author:	Low, Lynn Yien
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/43780/1/Low%20Lynn%20Yien24.pdf
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spelling	my-usm-ep.437802019-04-12T05:26:16Z The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering 2013-05 Low, Lynn Yien QC1 Physics (General) Zinc Oxide (ZnO) is an attractive semiconductor for various applications due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Thus, realization of reproducible and good p-type ZnO is important for the formation of homo p-n junction in electronic and opto-electronic devices. However, ZnO exhibits intrinsic n-type conductivity, low acceptors solubility and compensation effect that have hindered research on the materials and device development. The main objective of this research work is to fabricate high quality p-type ZnO using a new approach in an oxygen (O) rich growth environment by RF magnetron sputtering. The structural, electrical and optical properties of the fabricated ZnO film were characterized. The acceptor doped ZnO thin films on glass substrate were fabricated by the RF sputtering of ZnO target in N2O/Ar gas environment. The variation of substrate temperature (room temperature to 400 ºC) and gas ratio of N2O (0 - 70%) were applied in order to determine the optimum process variables for the deposition of p-type nitrogen doped ZnO (NZO). Aluminium (Al) metal target with different RF power (0 – 110 W) was used for the deposition of aluminium and nitrogen doped ZnO (ANZO) thin films at different Al concentration in order to compare with single doped ZnO 2013-05 Thesis http://eprints.usm.my/43780/ http://eprints.usm.my/43780/1/Low%20Lynn%20Yien24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Low, Lynn Yien The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
description	Zinc Oxide (ZnO) is an attractive semiconductor for various applications due to its direct wide band gap (3.37 eV) and high exciton binding energy (60 meV). Thus, realization of reproducible and good p-type ZnO is important for the formation of homo p-n junction in electronic and opto-electronic devices. However, ZnO exhibits intrinsic n-type conductivity, low acceptors solubility and compensation effect that have hindered research on the materials and device development. The main objective of this research work is to fabricate high quality p-type ZnO using a new approach in an oxygen (O) rich growth environment by RF magnetron sputtering. The structural, electrical and optical properties of the fabricated ZnO film were characterized. The acceptor doped ZnO thin films on glass substrate were fabricated by the RF sputtering of ZnO target in N2O/Ar gas environment. The variation of substrate temperature (room temperature to 400 ºC) and gas ratio of N2O (0 - 70%) were applied in order to determine the optimum process variables for the deposition of p-type nitrogen doped ZnO (NZO). Aluminium (Al) metal target with different RF power (0 – 110 W) was used for the deposition of aluminium and nitrogen doped ZnO (ANZO) thin films at different Al concentration in order to compare with single doped ZnO
format	Thesis
qualification_level	Master's degree
author	Low, Lynn Yien
author_facet	Low, Lynn Yien
author_sort	Low, Lynn Yien
title	The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
title_short	The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
title_full	The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
title_fullStr	The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
title_full_unstemmed	The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering
title_sort	electrical and structural properties of aluminium and nitrogen doped zinc oxide thin film prepared by radio frequency sputtering
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2013
url	http://eprints.usm.my/43780/1/Low%20Lynn%20Yien24.pdf
_version_	1747821278105960448

The Electrical And Structural Properties Of Aluminium And Nitrogen Doped Zinc Oxide Thin Film Prepared By Radio Frequency Sputtering

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