Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films

InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic app...

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Main Author:	Ganie, Umar Bashir
Format:	Thesis
Language:	English
Published:	2018
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf
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spelling	my-usm-ep.442752019-05-06T03:15:01Z Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films 2018-04 Ganie, Umar Bashir QC1 Physics (General) InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic applications. The commonly used growth techniques include molecular beam epitaxy and metalorganic chemical vapor deposition. Radio frequency (RF) sputtering is also commonly used for the growth of thin films and nanostructures, but it usually produces polycrystalline films with high carrier concentration and low electron mobility. However, the benefit of using RF sputtering are its low cost, easy to handle and produces InN films even at room temperature which is not possible with other mentioned techniques. 2018-04 Thesis http://eprints.usm.my/44275/ http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Ganie, Umar Bashir Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
description	InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic applications. The commonly used growth techniques include molecular beam epitaxy and metalorganic chemical vapor deposition. Radio frequency (RF) sputtering is also commonly used for the growth of thin films and nanostructures, but it usually produces polycrystalline films with high carrier concentration and low electron mobility. However, the benefit of using RF sputtering are its low cost, easy to handle and produces InN films even at room temperature which is not possible with other mentioned techniques.
format	Thesis
qualification_level	Master's degree
author	Ganie, Umar Bashir
author_facet	Ganie, Umar Bashir
author_sort	Ganie, Umar Bashir
title	Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_short	Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_full	Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_fullStr	Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_full_unstemmed	Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
title_sort	structural, electrical, and optical properties of indium nitride thin films
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2018
url	http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf
_version_	1747821352642936832

Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films

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