Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell

Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotexture...

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Main Author:	Noor, Nur Afidah Md.
Format:	Thesis
Language:	English
Published:	2021
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf
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spelling	my-usm-ep.522142022-04-06T07:32:48Z Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell 2021-03 Noor, Nur Afidah Md. QC1 Physics (General) Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotextured c-Si, has a huge potential for applications in solar cell due to its superior broadband light absorption within 300-1100 nm wavelength region. In this work, two-step metal-assisted chemical etching (MACE) is used to synthesize b-Si by combining low-annealing temperature of silver (Ag) film and short duration of etching of the c-Si wafer. For the b-Si fabrication, p-type (100) c-Si wafers are deposited with 15 nm Ag film using radio frequency (RF) sputtering process. Subsequently, the Ag film is annealed at low temperatures (200-230ᵒC) for 40 min in nitrogen (N2) ambient, producing Ag nanoparticles (NPs). Then, the c-Si wafers with the Ag NPs are etched in a solution containing hydrofluoric acid:hydrogen peroxide:deionized water (HF:H2O2:DI H2O) for a short duration (35-180 s). Effects of etching time, etchant volume ratio and annealing temperature towards surface morphological and optical properties by using atomic force microscope (AFM), field emission scanning electron microscope (FESEM) and UV-Vis-NIR (within 300-1100 nm wavelength region) of b-Si are then investigated. From the investigation, the b-Si with the lowest broadband reflection is produced by annealing at 230ᵒC for 40 min and etched for 70 s using HF:H2O2:DI H2O (1:5:10 by volume). 2021-03 Thesis http://eprints.usm.my/52214/ http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf application/pdf en public masters Perpustakaan Hamzah Sendut Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Noor, Nur Afidah Md. Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
description	Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotextured c-Si, has a huge potential for applications in solar cell due to its superior broadband light absorption within 300-1100 nm wavelength region. In this work, two-step metal-assisted chemical etching (MACE) is used to synthesize b-Si by combining low-annealing temperature of silver (Ag) film and short duration of etching of the c-Si wafer. For the b-Si fabrication, p-type (100) c-Si wafers are deposited with 15 nm Ag film using radio frequency (RF) sputtering process. Subsequently, the Ag film is annealed at low temperatures (200-230ᵒC) for 40 min in nitrogen (N2) ambient, producing Ag nanoparticles (NPs). Then, the c-Si wafers with the Ag NPs are etched in a solution containing hydrofluoric acid:hydrogen peroxide:deionized water (HF:H2O2:DI H2O) for a short duration (35-180 s). Effects of etching time, etchant volume ratio and annealing temperature towards surface morphological and optical properties by using atomic force microscope (AFM), field emission scanning electron microscope (FESEM) and UV-Vis-NIR (within 300-1100 nm wavelength region) of b-Si are then investigated. From the investigation, the b-Si with the lowest broadband reflection is produced by annealing at 230ᵒC for 40 min and etched for 70 s using HF:H2O2:DI H2O (1:5:10 by volume).
format	Thesis
qualification_level	Master's degree
author	Noor, Nur Afidah Md.
author_facet	Noor, Nur Afidah Md.
author_sort	Noor, Nur Afidah Md.
title	Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_short	Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_full	Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_fullStr	Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_full_unstemmed	Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_sort	synthesis and characterization of black silicon by silver-assisted chemical etching for solar cell
granting_institution	Perpustakaan Hamzah Sendut
granting_department	Pusat Pengajian Sains Fizik
publishDate	2021
url	http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf
_version_	1747822146876342272

Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell

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