Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal

In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AIGaN as catalytic metals contact using sputtering system through meta! mask to detect N2, H2 and CH4 gases with different concentrations and different metal thicknesses with a range of SO-300nm. Samples were annealed...

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Main Author: Hudeish, Abdo Yahya Omer
Format: Thesis
Language:English
Published: 2005
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Online Access:http://eprints.usm.my/55540/1/abdo%20yahya.pdf
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spelling my-usm-ep.555402022-11-08T01:26:17Z Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal 2005-12 Hudeish, Abdo Yahya Omer QC1 Physics (General) In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AIGaN as catalytic metals contact using sputtering system through meta! mask to detect N2, H2 and CH4 gases with different concentrations and different metal thicknesses with a range of SO-300nm. Samples were annealed at various temperatures from 500°C up to 1000°C for 5 min in argon prior to sensing charactersation. Special chamber was designed and built to test the sensor capability. All samples were examined by electrical characterization, using current-voltage (I-V) with temperature range from 25°C to 500°C. All samples were found capable of detecting gas at a broad temperature range from 25°C to 500°C. The resistance of samples was measured with different parameters such as thickness, annealing temperatures, gases, and concentration of gases and operated temperatures. All resistance of the samples, time response and recovery time were measured at different temperature range (25°C- 500°C). The annealing temperature plays an important role in the changes of sensitivity due to changes of parameter such as distance between grains, outdiffusion or indiffusion of metals, and formation of dipoles. The change in current increases with measurement temperature and begins immediately upon introduction of the hydrogen. Pt/n-AIGaN showed a good device selectivity and high sensitivity as hydrogen gas sensor compared to Pt/p-GaN and PUn-GaN respectively. 2005-12 Thesis http://eprints.usm.my/55540/ http://eprints.usm.my/55540/1/abdo%20yahya.pdf application/pdf en public phd doctoral Perpustakaan Hamzah Sendut Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Hudeish, Abdo Yahya Omer
Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
description In this work, Pt, Pd, Ag and Ni were deposited on p type and n type of GaN and AIGaN as catalytic metals contact using sputtering system through meta! mask to detect N2, H2 and CH4 gases with different concentrations and different metal thicknesses with a range of SO-300nm. Samples were annealed at various temperatures from 500°C up to 1000°C for 5 min in argon prior to sensing charactersation. Special chamber was designed and built to test the sensor capability. All samples were examined by electrical characterization, using current-voltage (I-V) with temperature range from 25°C to 500°C. All samples were found capable of detecting gas at a broad temperature range from 25°C to 500°C. The resistance of samples was measured with different parameters such as thickness, annealing temperatures, gases, and concentration of gases and operated temperatures. All resistance of the samples, time response and recovery time were measured at different temperature range (25°C- 500°C). The annealing temperature plays an important role in the changes of sensitivity due to changes of parameter such as distance between grains, outdiffusion or indiffusion of metals, and formation of dipoles. The change in current increases with measurement temperature and begins immediately upon introduction of the hydrogen. Pt/n-AIGaN showed a good device selectivity and high sensitivity as hydrogen gas sensor compared to Pt/p-GaN and PUn-GaN respectively.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Hudeish, Abdo Yahya Omer
author_facet Hudeish, Abdo Yahya Omer
author_sort Hudeish, Abdo Yahya Omer
title Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
title_short Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
title_full Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
title_fullStr Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
title_full_unstemmed Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
title_sort gallium nitride (gan) based gas sensor using catalytic metal
granting_institution Perpustakaan Hamzah Sendut
granting_department Pusat Pengajian Sains Fizik
publishDate 2005
url http://eprints.usm.my/55540/1/abdo%20yahya.pdf
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