Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon

This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct curre...

Full description

Saved in:

Bibliographic Details
Main Author:	Shamsuddin, Siti Nur Atikah
Format:	Thesis
Language:	English
Published:	2019
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.55614
record_format	uketd_dc
spelling	my-usm-ep.556142022-11-11T01:12:32Z Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon 2019-11 Shamsuddin, Siti Nur Atikah QC1 Physics (General) This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively 2019-11 Thesis http://eprints.usm.my/55614/ http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Shamsuddin, Siti Nur Atikah Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
description	This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively
format	Thesis
qualification_level	Master's degree
author	Shamsuddin, Siti Nur Atikah
author_facet	Shamsuddin, Siti Nur Atikah
author_sort	Shamsuddin, Siti Nur Atikah
title	Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_short	Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_full	Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_fullStr	Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_full_unstemmed	Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
title_sort	electrochemical and radio frequency sputtering growth of gan nanostructures on porous silicon
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2019
url	http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf
_version_	1776101099097292800

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon

Similar Items